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公开(公告)号:US10446669B2
公开(公告)日:2019-10-15
申请号:US15964398
申请日:2018-04-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Han Fan , Wei-Yuan Lu , Yu-Lin Yang , Chun-Hsiang Fan , Sai-Hooi Yeong
IPC: H01L29/66 , H01L29/08 , H01L21/02 , H01L21/265 , H01L21/3065 , H01L29/78 , H01L21/225 , H01L21/311
Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.
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公开(公告)号:US20200044062A1
公开(公告)日:2020-02-06
申请号:US16600904
申请日:2019-10-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Han Fan , Wei-Yuan Lu , Yu-Lin Yang , Chun-Hsiang Fan , Sai-Hooi Yeong
IPC: H01L29/66 , H01L29/08 , H01L21/02 , H01L21/265 , H01L21/3065 , H01L29/78 , H01L21/225 , H01L21/311 , H01L21/306
Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.
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公开(公告)号:US20230065318A1
公开(公告)日:2023-03-02
申请号:US17461412
申请日:2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Han Fan , Wei-Yang Lee , Tzu-Hua Chiu , Chia-Pin Lin
IPC: H01L29/40 , H01L29/417 , H01L21/768
Abstract: A method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. The method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. The method further includes performing an etching process from a backside of the substrate to remove a first portion of the dummy fin adjacent to the source/drain feature, thereby forming a first trench in the dummy fin, where the first trench extends from the dummy fin to the source/drain feature. The method further includes forming a first dielectric layer in the first trench and replacing a second portion of the dummy fin with a source/drain contact.
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公开(公告)号:US20190165139A1
公开(公告)日:2019-05-30
申请号:US15964398
申请日:2018-04-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Han Fan , Wei-Yuan Lu , Yu-Lin Yang , Chun-Hsiang Fan , Sai-Hooi Yeong
IPC: H01L29/66 , H01L29/08 , H01L21/02 , H01L21/265 , H01L21/311 , H01L21/3065 , H01L29/78 , H01L21/225
Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.
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