公开(公告)号：US10446669B2

公开(公告)日：2019-10-15

申请号：US15964398

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Fan ,  Wei-Yuan Lu ,  Yu-Lin Yang ,  Chun-Hsiang Fan ,  Sai-Hooi Yeong

IPC: H01L29/66 ,  H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/78 ,  H01L21/225 ,  H01L21/311

Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.

公开(公告)号：US20200044062A1

公开(公告)日：2020-02-06

申请号：US16600904

申请日：2019-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Fan ,  Wei-Yuan Lu ,  Yu-Lin Yang ,  Chun-Hsiang Fan ,  Sai-Hooi Yeong

IPC: H01L29/66 ,  H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/78 ,  H01L21/225 ,  H01L21/311 ,  H01L21/306

Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.

公开(公告)号：US20230065318A1

公开(公告)日：2023-03-02

申请号：US17461412

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Fan ,  Wei-Yang Lee ,  Tzu-Hua Chiu ,  Chia-Pin Lin

IPC: H01L29/40 ,  H01L29/417 ,  H01L21/768

Abstract: A method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. The method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. The method further includes performing an etching process from a backside of the substrate to remove a first portion of the dummy fin adjacent to the source/drain feature, thereby forming a first trench in the dummy fin, where the first trench extends from the dummy fin to the source/drain feature. The method further includes forming a first dielectric layer in the first trench and replacing a second portion of the dummy fin with a source/drain contact.

公开(公告)号：US20190165139A1

公开(公告)日：2019-05-30

申请号：US15964398

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Fan ,  Wei-Yuan Lu ,  Yu-Lin Yang ,  Chun-Hsiang Fan ,  Sai-Hooi Yeong

IPC: H01L29/66 ,  H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/78 ,  H01L21/225

Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.