公开(公告)号：US11121162B2

公开(公告)日：2021-09-14

申请号：US16405027

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsun-Kai Tsao ,  Jiech-Fun Lu ,  Shih-Pei Chou ,  Tzu-Ming Wang

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.