公开(公告)号：US20230008413A1

公开(公告)日：2023-01-12

申请号：US17651251

申请日：2022-02-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Kang Ho ,  Kuo-Ju Chen ,  Wei-Ting Chang ,  Wei-Fu Wang ,  Li-Ting Wang ,  Huicheng Chang ,  Yee-Chia Yeo ,  Yi-Chao Wang ,  Tsai-Yu Huang

IPC: H01L29/66

Abstract: A method includes forming a fin protruding from a semiconductor substrate; forming a dummy gate stack over the fin, wherein forming the dummy gate stack includes depositing a layer of amorphous material over the fin; performing an anneal process on the layer of amorphous material, wherein the anneal process recrystallizes the layer of amorphous material into a layer of polycrystalline material, wherein the anneal process includes heating the layer of amorphous material for less than one millisecond; and patterning the layer of polycrystalline material; and forming an epitaxial source/drain region in the fin adjacent the dummy gate stack; and removing the dummy gate stack and replacing the dummy gate stack with a replacement gate stack.