公开(公告)号：US11456256B2

公开(公告)日：2022-09-27

申请号：US16885282

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang Tung ,  Chen-Hua Yu ,  Tung-Liang Shao ,  Su-Chun Yang ,  Wen-Lin Shih

IPC: H01L23/538 ,  H01L23/373 ,  H01L25/065 ,  H01L21/768 ,  H01L21/50

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

公开(公告)号：US20210375766A1

公开(公告)日：2021-12-02

申请号：US16885282

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang Tung ,  Chen-Hua Yu ,  Tung-Liang Shao ,  Su-Chun Yang ,  Wen-Lin Shih

IPC: H01L23/538 ,  H01L23/373 ,  H01L25/065 ,  H01L21/50 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

公开(公告)号：US11101195B2

公开(公告)日：2021-08-24

申请号：US16373915

申请日：2019-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Liang Shao ,  Wen-Lin Shih ,  Su-Chun Yang ,  Chih-Hang Tung ,  Chen-Hua Yu

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L25/00

Abstract: A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.