Packaged semiconductor device and method of forming thereof

    公开(公告)号:US12218089B2

    公开(公告)日:2025-02-04

    申请号:US18153847

    申请日:2023-01-12

    Abstract: A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.

    Packaged Semiconductor Device and Method of Forming Thereof

    公开(公告)号:US20210407942A1

    公开(公告)日:2021-12-30

    申请号:US17232528

    申请日:2021-04-16

    Abstract: A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.

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