公开(公告)号：US12180576B2

公开(公告)日：2024-12-31

申请号：US18360667

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Yi-Chih Chen ,  Shih-Wei Bih

IPC: H01L21/768 ,  C23C14/14 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L23/532

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US11725270B2

公开(公告)日：2023-08-15

申请号：US17115700

申请日：2020-12-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Yi-Chih Chen ,  Shih Wei Bih

IPC: C23C14/34 ,  H01L21/768 ,  H01J37/34 ,  C23C14/14 ,  H01L21/285 ,  H01L23/532

CPC classification number: C23C14/3407 ,  C23C14/14 ,  C23C14/3464 ,  H01J37/3429 ,  H01J37/3435 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.