公开(公告)号：US11462394B2

公开(公告)日：2022-10-04

申请号：US16572186

申请日：2019-09-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hsi Wang ,  Kun-Che Ho ,  Yen-Yu Chen

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02

Abstract: A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.

公开(公告)号：US12198927B2

公开(公告)日：2025-01-14

申请号：US17461725

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  H01L21/02 ,  H01L21/67 ,  H01L21/66

Abstract: A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.

公开(公告)号：US12180576B2

公开(公告)日：2024-12-31

申请号：US18360667

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Yi-Chih Chen ,  Shih-Wei Bih

IPC: H01L21/768 ,  C23C14/14 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L23/532

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US11725270B2

公开(公告)日：2023-08-15

申请号：US17115700

申请日：2020-12-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Yi-Chih Chen ,  Shih Wei Bih

IPC: C23C14/34 ,  H01L21/768 ,  H01J37/34 ,  C23C14/14 ,  H01L21/285 ,  H01L23/532

CPC classification number: C23C14/3407 ,  C23C14/14 ,  C23C14/3464 ,  H01J37/3429 ,  H01J37/3435 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US12094698B2

公开(公告)日：2024-09-17

申请号：US18317009

申请日：2023-05-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hsi Wang ,  Kun-Che Ho ,  Yen-Yu Chen

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3455 ,  C23C14/3407 ,  C23C14/3442 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3461 ,  H01L21/02631

Abstract: A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

公开(公告)号：US11823878B2

公开(公告)日：2023-11-21

申请号：US17461742

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen

IPC: C23C14/34 ,  H01J37/34 ,  H01L21/033

CPC classification number: H01J37/3417 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3423 ,  H01L21/0337

Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

公开(公告)号：US11688591B2

公开(公告)日：2023-06-27

申请号：US17876489

申请日：2022-07-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hsi Wang ,  Kun-Che Ho ,  Yen-Yu Chen

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3455 ,  C23C14/3407 ,  C23C14/3442 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3461 ,  H01L21/02631

Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

公开(公告)号：US20250167037A1

公开(公告)日：2025-05-22

申请号：US18512146

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Yi-Hu Lo ,  Pei-Shih Tsai ,  Zong-Kun Lin

IPC: H01L21/687 ,  H01L21/306 ,  H01L21/67

Abstract: A wafer chuck assembly is provided. In one embodiment, the chuck assembly comprises a hub, a plurality of arms mounted to the hub and a plurality of holders. Each arm extends outwardly from the hub, and each arm has a proximal end adjacent the hub and a distal end remote from the hub. Each holder is mounted at the distal end of each respective arm, and each holder has a plurality of support pins configured to support a wafer.

公开(公告)号：US12237159B2

公开(公告)日：2025-02-25

申请号：US18472556

申请日：2023-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen

IPC: H01J37/34 ,  C23C14/34 ,  H01L21/033

Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.