公开(公告)号：US20200098544A1

公开(公告)日：2020-03-26

申请号：US16408795

申请日：2019-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh MENG ,  Chui-Ya Peng ,  Nai-Han CHENG

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/265 ,  H01L21/8238 ,  C23C14/48

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

公开(公告)号：US20200381210A1

公开(公告)日：2020-12-03

申请号：US16996696

申请日：2020-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh MENG ,  Chui-Ya PENG ,  Nai-Han CHENG

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/8238 ,  C23C14/48 ,  H01L21/265

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.