公开(公告)号：US20250105037A1

公开(公告)日：2025-03-27

申请号：US18976097

申请日：2024-12-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Rong XIAO ,  Wei-Hsiang HUANG ,  Sen-Yeo PENG ,  Chui-Ya PENG

IPC: H01L21/67

Abstract: A system includes a cooler, a concentration meter, a first pump and a second pump. The cooler is configured to cool first liquid by second liquid in the cooler. The concentration meter is configured to measure a concentration of the first liquid. The first pump is configured to move the first liquid according to the concentration. The second pump is coupled to the cooler, disposed with the first pump in a parallel manner, and configured to move the second liquid.

公开(公告)号：US20220262654A1

公开(公告)日：2022-08-18

申请号：US17736933

申请日：2022-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yu LEE ,  Sen-Yeo PENG ,  Chui-Ya PENG

IPC: H01L21/67 ,  B08B3/04 ,  H01L21/02 ,  H01L21/687 ,  B08B5/00

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

公开(公告)号：US20230343617A1

公开(公告)日：2023-10-26

申请号：US18338981

申请日：2023-06-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Rong XIAO ,  Wei-Hsiang HUANG ,  Sen-Yeo PENG ,  Chui-Ya PENG

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  H01L21/67057

Abstract: A system includes a cooler, a concentration meter, a first pump and a second pump. The cooler is configured to cool first liquid by second liquid in the cooler. The concentration meter is configured to measure a concentration of the first liquid. The first pump is configured to move the first liquid according to the concentration. The second pump is coupled to the cooler, disposed with the first pump in a parallel manner, and configured to move the second liquid.

公开(公告)号：US20200095681A1

公开(公告)日：2020-03-26

申请号：US16136870

申请日：2018-09-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Lung YANG ,  Chui-Ya PENG ,  Chih-Ta KUAN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/46 ,  C23C16/448 ,  C23C16/52

Abstract: The present disclosure relates to an apparatus and a method of delivering a liquid to a downstream process. The apparatus can include a vessel configured to retain a liquid, a bellow in fluid communication with the vessel to receive the liquid from the vessel and in fluid communication with the downstream process to deliver the liquid. The bellow can be exposed to a constant external pressure and configured to deliver the liquid under the constant external pressure when the bellow stops receiving the liquid from the vessel. In some embodiments, the constant external pressure is atmospheric pressure. The bellow can include a pressure deformable material. The apparatus can further include a vaporizer configured to receive the liquid and to produce a vapor, one or more chemical vapor deposition chambers configured to receive the vapor and to hold a substrate for deposition of a component of the vapor on a substrate.

公开(公告)号：US20160254179A1

公开(公告)日：2016-09-01

申请号：US14632690

申请日：2015-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hsu YEN ,  Bang-Yu HUANG ,  Chui-Ya PENG ,  Ching-Wen CHEN

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/76224 ,  C23C16/045 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  H01L29/0649

Abstract: A method for fabricating a shallow trench isolation includes forming a trench in a substrate, forming a bottom shallow trench isolation dielectric filling a gap of the trench, and forming a top shallow trench isolation dielectric on the bottom shallow trench isolation. The bottom shallow trench isolation dielectric has a concave center portion, and the top shallow trench isolation dielectric is deposited on the bottom shallow trench isolation by a high density plasma chemical vapor deposition process using low deposition to sputter ratio. A semiconductor structure having the shallow trench isolation is also disclosed.

Abstract translation: 用于制造浅沟槽隔离的方法包括在衬底中形成沟槽，形成填充沟槽间隙的底部浅沟槽隔离电介质，以及在底部浅沟槽隔离件上形成顶部浅沟槽隔离电介质。 底部浅沟槽隔离电介质具有凹入的中心部分，并且通过使用低沉积溅射比的高密度等离子体化学气相沉积工艺将顶部浅沟槽隔离电介质沉积在底部浅沟槽隔离层上。 还公开了具有浅沟槽隔离的半导体结构。

公开(公告)号：US20210043771A1

公开(公告)日：2021-02-11

申请号：US17078856

申请日：2020-10-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Fen CHEN ,  Chui-Ya PENG ,  Ching YU ,  Pin-Hen LIN ,  Yen CHUANG ,  Yuh-Ta FAN

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

公开(公告)号：US20200381210A1

公开(公告)日：2020-12-03

申请号：US16996696

申请日：2020-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh MENG ,  Chui-Ya PENG ,  Nai-Han CHENG

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/8238 ,  C23C14/48 ,  H01L21/265

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

公开(公告)号：US20200075356A1

公开(公告)日：2020-03-05

申请号：US16547428

申请日：2019-08-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chun HSU ,  Shu-Yen WANG ,  Chui-Ya PENG

IPC: H01L21/67 ,  H01L21/02

Abstract: In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

公开(公告)号：US20200058521A1

公开(公告)日：2020-02-20

申请号：US16539265

申请日：2019-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Hsiung SHIH ,  Bo-Chen CHEN ,  Yung-Li TSAI ,  Chui-Ya PENG

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

Abstract: In an embodiment, a system includes: a pedestal configured to secure a wafer; a nozzle configured to deposit a cleaning solution on the wafer disposed on the pedestal during a cleaning session; and a plurality of contacts configured to secure the wafer to the pedestal while the cleaning solution is deposited on the wafer, wherein a first subset of the plurality of contacts is configured to contact the wafer at a first time interval and a second subset of the plurality of contacts is configured to contact the wafer at a second time interval.

公开(公告)号：US20190312144A1

公开(公告)日：2019-10-10

申请号：US16435070

申请日：2019-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Fen CHEN ,  Chui-Ya PENG ,  Ching YU ,  Pin-Hen LIN ,  Yen CHUANG ,  Yuh-Ta FAN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.