公开(公告)号：US11527380B2

公开(公告)日：2022-12-13

申请号：US16837724

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh Meng ,  Chui-Ya Peng ,  Shih-Hao Lin

IPC: H01J37/32 ,  H01J37/317 ,  H01J37/08 ,  H01L21/265

Abstract: An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

公开(公告)号：US10784079B2

公开(公告)日：2020-09-22

申请号：US16408795

申请日：2019-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh Meng ,  Chui-Ya Peng ,  Nai-Han Cheng

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/8238 ,  C23C14/48 ,  H01L21/265

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

公开(公告)号：US20210313144A1

公开(公告)日：2021-10-07

申请号：US16837724

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh Meng ,  Chui-Ya Peng ,  Shih-Hao Lin

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32 ,  H01L21/265

Abstract: An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

公开(公告)号：US11282673B2

公开(公告)日：2022-03-22

申请号：US16996696

申请日：2020-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh Meng ,  Chui-Ya Peng ,  Nai-Han Cheng

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/8238 ,  C23C14/48 ,  H01L21/265

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.