公开(公告)号：US11527382B2

公开(公告)日：2022-12-13

申请号：US17356100

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Ping-Chih Ou

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/08 ,  F17C13/04

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

公开(公告)号：US11060980B2

公开(公告)日：2021-07-13

申请号：US15901806

申请日：2018-02-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Hsing-Piao Hsu

IPC: G01N21/95 ,  G01N21/33 ,  G01N21/88

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

公开(公告)号：US20200152495A1

公开(公告)日：2020-05-14

申请号：US16735973

申请日：2020-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/67 ,  H01L21/66 ,  G01B11/24 ,  G01B11/14 ,  G01B11/16

Abstract: The present disclosure, in some embodiments, relates to a substrate metrology system. The substrate metrology system includes a warpage measurement module configured to determine one or more substrate warpage parameters of a substrate. The substrate includes a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate. A metrology module is located physically downstream of the warpage measurement module and has an optical element configured to measure one or more dimensions of the substrate. The metrology module is configured to place the optical element at a plurality of different initial positions, which are directly over a plurality of different locations on the substrate, based upon the one or more substrate warpage parameters. A substrate transport system is configured to transfer the substrate from a first position within the warpage measurement module to a non-overlapping second position within the metrology module.

公开(公告)号：US10269530B1

公开(公告)日：2019-04-23

申请号：US15885286

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Piao Hsu ,  Nai-Han Cheng ,  Shih-Fang Chen

IPC: H01J37/08 ,  H01L21/26 ,  H01L21/265 ,  H01J37/317

Abstract: An apparatus includes an ionization chamber and an electron source device at least partially disposed inside the ionization chamber. The ionization chamber is configured to receive at least one chemical and provide plasma having ionized chemicals. The electron source device includes at least one filament configured to generate electrons, and a cathode configured to emit secondary electrons from the front surface when the electrons from the at least one filament hit the back surface of the cathode. The front surface of the cathode is shaped convex facing inside the ionization chamber.

公开(公告)号：US10181415B2

公开(公告)日：2019-01-15

申请号：US15831806

申请日：2017-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: G01B11/02 ,  G01B11/24 ,  H01L21/67 ,  G01B11/16 ,  G01B11/14 ,  H01L21/66 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  H01L25/065

Abstract: In some embodiments, the present disclosure relates to a method of bump metrology The method is performed by forming a through-substrate-via within a substrate, forming a plurality of metal interconnect layers within a dielectric structure over the substrate, and forming a bump on the plurality of metal interconnect layers. One or more substrate warpage parameters of the substrate are measured and an initial position of a lens within a substrate metrology module is calculated based upon the one or more substrate warpage parameters. The lens is then moved to the initial position, and a height and a width of the bump are measured using the substrate metrology module after moving the lens to the initial position.

公开(公告)号：US20190139800A1

公开(公告)日：2019-05-09

申请号：US16234675

申请日：2018-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/67 ,  G01B11/14 ,  G01B11/24 ,  H01L21/66 ,  G01B11/16 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  H01L25/065

Abstract: The present disclosure, in some embodiments, relates to a substrate metrology system. The substrate metrology system includes a substrate warpage measurement module configured to determine one or more substrate warpage parameters of a substrate by taking a plurality of separate measurements at a plurality of different positions over a substrate. The substrate has a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate and a conductive bump disposed over the dielectric structure and configured to be coupled to an additional substrate of a multi-dimensional chip. A substrate metrology module has an optical component and is configured to measure one or more dimensions of the conductive bump. A position control element is configured to move the optical component. A feed-forward path is coupled between an output of the substrate warpage measurement module and an input of the position control element.

公开(公告)号：US20180096872A1

公开(公告)日：2018-04-05

申请号：US15831806

申请日：2017-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/67 ,  G01B11/16 ,  G01B11/24 ,  H01L21/66 ,  G01B11/14 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L21/67288 ,  G01B11/14 ,  G01B11/161 ,  G01B11/2441 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/20 ,  H01L23/562 ,  H01L24/11 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/014

Abstract: In some embodiments, the present disclosure relates to a method of bump metrology The method is performed by forming a through-substrate-via within a substrate, forming a plurality of metal interconnect layers within a dielectric structure over the substrate, and forming a bump on the plurality of metal interconnect layers. One or more substrate warpage parameters of the substrate are measured and an initial position of a lens within a substrate metrology module is calculated based upon the one or more substrate warpage parameters. The lens is then moved to the initial position, and a height and a width of the bump are measured using the substrate metrology module after moving the lens to the initial position.

公开(公告)号：US11282673B2

公开(公告)日：2022-03-22

申请号：US16996696

申请日：2020-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Chieh Meng ,  Chui-Ya Peng ,  Nai-Han Cheng

IPC: H01J37/317 ,  H01J37/08 ,  H01J27/20 ,  H01L21/8238 ,  C23C14/48 ,  H01L21/265

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

公开(公告)号：US09859139B2

公开(公告)日：2018-01-02

申请号：US14798661

申请日：2015-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/67 ,  G01B11/16 ,  G01B11/14 ,  G01B11/24 ,  H01L21/66 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L21/67288 ,  G01B11/14 ,  G01B11/161 ,  G01B11/2441 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/20 ,  H01L23/562 ,  H01L24/11 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/014

Abstract: The present disclosure relates to a method of bump metrology that relies upon advanced process control (APC) to provide substrate warpage parameters describing a warpage of a substrate to a bump metrology module to improve focus of the bump metrology module. In some embodiments, the method measures one or more substrate warpage parameters of a semiconductor substrate. An initial focal height of a lens of a bump metrology module is calculated based upon the measured substrate warpage parameters. The lens of the bump metrology module is then placed at the initial focal height, and height and critical dimensions of a plurality of bumps on the semiconductor substrate are subsequently measured using the lens. By providing the substrate warpage parameters to the bump metrology module, the bump metrology module can use real-time process control to account for wafer warpage, thereby improving throughput and yield.

公开(公告)号：US20240153787A1

公开(公告)日：2024-05-09

申请号：US18168265

申请日：2023-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jhih-Yu Li ,  Nai-Han Cheng ,  Chien-Hung Lu

IPC: H01L21/67 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01L21/67017 ,  C23C14/48 ,  C23C14/54 ,  H01L21/67242 ,  H01L21/67167 ,  H01L21/67213 ,  H01L21/76883

Abstract: Methods and apparatuses for adjusting and controlling conditions within the environment of a workpiece handling module include sensors for detecting humidity and concentration of harmful gasses. Signals generated by these sensors are utilized to generate signals that control the flow of air into the environment and/or the flow of air and gases out of the environment. By controlling the humidity, negative impacts on processes carried out in the environment are avoided. By controlling the gas concentration, exposure of workers to harmful gases is avoided.