公开(公告)号：US11227747B2

公开(公告)日：2022-01-18

申请号：US16657503

申请日：2019-10-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chi Lin ,  Yi-Wei Chiu ,  Hung-Jui Chang ,  Chin-Hsing Lin ,  Yu Lun Ke

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/311

Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.

公开(公告)号：US11222805B2

公开(公告)日：2022-01-11

申请号：US16837938

申请日：2020-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chi Lin ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Jen Lo ,  Chih-Teng Liao

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

公开(公告)号：US10529543B2

公开(公告)日：2020-01-07

申请号：US16038825

申请日：2018-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chi Lin ,  Yi-Wei Chiu ,  Hung Jui Chang ,  Chin-Hsing Lin ,  Yu Lun Ke

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.