公开(公告)号：US20200339413A1

公开(公告)日：2020-10-29

申请号：US16927223

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Jui CHEN ,  I-Shi WANG ,  Ren-Dou LEE ,  Jen-Hao LIU

IPC: B81B7/00 ,  B81C3/00 ,  B81B7/02 ,  B81C1/00

Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.