公开(公告)号：US20160005694A1

公开(公告)日：2016-01-07

申请号：US14322495

申请日：2014-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ting-Ying CHIEN ,  I-Shi WANG ,  Jen-Hao LIU ,  Ren-Dou LEE

IPC: H01L23/544 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2224/291 ,  H01L2224/32145 ,  H01L2224/83139 ,  H01L2224/83141 ,  H01L2224/94 ,  H01L2224/83 ,  H01L2924/014

Abstract: A semiconductor package structure includes a first wafer and a second wafer. The first wafer has a concave portion. The concave portion has a bottom surface and at least one sidewall adjacent to the bottom surface. An obtuse angle is formed between the bottom surface and the sidewall. The second wafer is disposed on the first wafer and has a protruding portion. When the protruding portion enters an opening of the concave portion, the protruding portion slides along the sidewall to the bottom surface, such that the protruding portion is coupled to the concave portion.

Abstract translation: 半导体封装结构包括第一晶片和第二晶片。 第一晶片具有凹部。 凹部具有底表面和邻近底表面的至少一个侧壁。 在底面和侧壁之间形成钝角。 第二晶片设置在第一晶片上并具有突出部分。 当突出部分进入凹部的开口时，突出部分沿着侧壁滑动到底面，使得突出部分联接到凹部。

公开(公告)号：US20190161344A1

公开(公告)日：2019-05-30

申请号：US16123719

申请日：2018-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang CHANG ,  I-Shi WANG ,  Jen-Hao LIU

IPC: B81C1/00

Abstract: A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.

公开(公告)号：US20200339413A1

公开(公告)日：2020-10-29

申请号：US16927223

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Jui CHEN ,  I-Shi WANG ,  Ren-Dou LEE ,  Jen-Hao LIU

IPC: B81B7/00 ,  B81C3/00 ,  B81B7/02 ,  B81C1/00

Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.

公开(公告)号：US20180148327A1

公开(公告)日：2018-05-31

申请号：US15456271

申请日：2017-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang CHANG ,  Jen-Hao LIU ,  I-Shi WANG

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.