公开(公告)号：US20180162720A1

公开(公告)日：2018-06-14

申请号：US15833072

申请日：2017-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Jui Cheng ,  I-Shi Wang ,  Ren-Dou Lee ,  Jen-Hao Liu

IPC: B81B7/00 ,  B81B7/02 ,  B81C3/00

CPC classification number: B81B7/007 ,  B81B7/0077 ,  B81B7/02 ,  B81C1/00238 ,  B81C1/00269 ,  B81C3/005 ,  B81C3/008 ,  B81C2203/019 ,  B81C2203/054 ,  B81C2203/0735 ,  B81C2203/075

Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.