公开(公告)号：US20190148522A1

公开(公告)日：2019-05-16

申请号：US16174921

申请日：2018-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang WU ,  Shiu-Ko JANGJIAN ,  Ting-Chun WANG ,  Yung-Si YU

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L21/762

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric structure over a transistor. The method includes forming a first recess in the dielectric structure. The method includes forming a first barrier layer over a first inner wall of the first recess. The first barrier layer has a first opening over a first portion of the dielectric structure, and the first barrier layer close to a first bottom surface of the first recess is thicker than the first barrier layer close to a top surface of the dielectric structure. The method includes removing the first portion through the first opening to form a second recess in the dielectric structure. The method includes forming a second barrier layer over a second inner wall of the second recess. The method includes forming a contact layer in the first opening and the second opening.

公开(公告)号：US20200251577A1

公开(公告)日：2020-08-06

申请号：US16852973

申请日：2020-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang WU ,  Shiu-Ko JANGJIAN ,  Ting-Chun WANG ,  Yung-Si YU

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/768 ,  H01L21/762 ,  H01L21/285 ,  H01L29/49

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor over a substrate. The semiconductor device structure includes a dielectric structure over the substrate and covering the transistor. The semiconductor device structure includes a contact structure passing through the dielectric structure and electrically connected to the transistor. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, a first lower portion of the first barrier layer is in direct contact with the dielectric structure, and a thickness of the first lower portion increases toward the substrate.