公开(公告)号：US20240243184A1

公开(公告)日：2024-07-18

申请号：US18434577

申请日：2024-02-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Yi PENG ,  Ching-Hua LEE ,  Song-Bor LEE

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/66439 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/78696

摘要： The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers. A first portion of the passivation layer is disposed between the epitaxial region and the stack of first and second semiconductor layers and a second portion of the passivation layer is disposed on sidewalls of the nanostructured channel regions