公开(公告)号：US20240386947A1

公开(公告)日：2024-11-21

申请号：US18786285

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chen Lin ,  Pei-Yuan Li ,  Hsiang-Yun Lin ,  Shang Lin Wu ,  Wei Min Chan

IPC: G11C11/418 ,  G11C11/412 ,  G11C11/419

Abstract: Disclosed herein are related to memory device including an adaptive word line control circuit. In one aspect, the memory device includes a memory cell and a word line driver coupled to the memory cell through a word line. In one aspect, the memory device includes an adaptive word line control circuit including two or more diodes connected in series, where one of the two or more diodes is coupled to the word line.

公开(公告)号：US12106800B2

公开(公告)日：2024-10-01

申请号：US17673025

申请日：2022-02-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chen Lin ,  Pei-Yuan Li ,  Hsiang-Yun Lin ,  Shang Lin Wu ,  Wei Min Chan

IPC: G11C11/418 ,  G11C11/412 ,  G11C11/419

CPC classification number: G11C11/418 ,  G11C11/412 ,  G11C11/419

Abstract: Disclosed herein are related to memory device including an adaptive word line control circuit. In one aspect, the memory device includes a memory cell and a word line driver coupled to the memory cell through a word line. In one aspect, the memory device includes an adaptive word line control circuit including two or more diodes connected in series, where one of the two or more diodes is coupled to the word line.