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公开(公告)号：US20200051858A1
公开(公告)日：2020-02-13
申请号：US16654845
申请日：2019-10-16
发明人： Pin-Wen Chen , Chia-Han Lai , Chih-Wei Chang , Mei-Hui Fu , Ming-Hsing Tsai , Wei-Jung Lin , Yu Shih Shih Wang , Ya-Yi Cheng , I-Li Chen
IPC分类号： H01L21/768 , H01L23/535 , H01L21/3213 , H01L21/285
摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
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公开(公告)号：US10943823B2
公开(公告)日：2021-03-09
申请号：US16654845
申请日：2019-10-16
发明人： Pin-Wen Chen , Chia-Han Lai , Chih-Wei Chang , Mei-Hui Fu , Ming-Hsing Tsai , Wei-Jung Lin , Yu Shih Shih Wang , Ya-Yi Cheng , I-Li Chen
IPC分类号： H01L21/768 , H01L23/535 , H01L21/3213 , H01L21/285
摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
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公开(公告)号：US11410880B2
公开(公告)日：2022-08-09
申请号：US16392067
申请日：2019-04-23
发明人： Chun-Hsien Huang , I-Li Chen , Pin-Wen Chen , Yuan-Chen Hsu , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai
IPC分类号： H01L21/768 , H01L23/532 , H01L23/522
摘要： A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.
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公开(公告)号：US20200343135A1
公开(公告)日：2020-10-29
申请号：US16392067
申请日：2019-04-23
发明人： Chun-Hsien Huang , I-Li Chen , Pin-Wen Chen , Yuan-Chen Hsu , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
摘要： A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.
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