公开(公告)号：US10943823B2

公开(公告)日：2021-03-09

申请号：US16654845

申请日：2019-10-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu Shih Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US20200051858A1

公开(公告)日：2020-02-13

申请号：US16654845

申请日：2019-10-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu Shih Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.