公开(公告)号：US20230093608A1

公开(公告)日：2023-03-23

申请号：US17994153

申请日：2022-11-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung-Po HSIEH ,  Su-Hao LIU ,  Hong-Chih LIU ,  Jing-Huei HUANG ,  Jie-Huang HUANG ,  Lun-Kuang TAN ,  Huicheng CHANG ,  Liang-Yin CHEN ,  Kuo-Ju CHEN

IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L23/532 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/417

摘要： A semiconductor structure is provided. The semiconductor structure includes a gate structure over a substrate. The semiconductor structure also includes source/drain structures on opposite sides of the gate structure. The semiconductor structure also includes a dielectric layer over the gate structure and the source/drain structures. The semiconductor structure also includes a via plug passing through the dielectric layer and including a first group IV element. The dielectric layer includes a second group IV element, a first compound, and a second compound, and the second compound includes elements in the first compound and the first group IV element.