公开(公告)号：US20240136401A1

公开(公告)日：2024-04-25

申请号：US18405099

申请日：2024-01-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yin-Kai Liao ,  Sin-Yi Jiang ,  Hsiang-Lin Chen ,  Yi-Shin Chu ,  Po-Chun Liu ,  Kuan-Chieh Huang ,  Jyh-Ming Hung ,  Jen-Cheng Liu

IPC分类号： H01L29/10 ,  H01L29/167 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/1087 ,  H01L29/167 ,  H01L29/4933 ,  H01L29/6659

摘要： The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

公开(公告)号：US20220367638A1

公开(公告)日：2022-11-17

申请号：US17869885

申请日：2022-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yin-Kai Liao ,  Sin-Yi Jiang ,  Hsiang-Lin Chen ,  Yi-Shin Chu ,  Po-Chun Liu ,  Kuan-Chieh Huang ,  Jyh-Ming Hung ,  Jen-Cheng Liu

IPC分类号： H01L29/10 ,  H01L29/49 ,  H01L29/167 ,  H01L29/66

摘要： The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.

公开(公告)号：US11908900B2

公开(公告)日：2024-02-20

申请号：US17869885

申请日：2022-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yin-Kai Liao ,  Sin-Yi Jiang ,  Hsiang-Lin Chen ,  Yi-Shin Chu ,  Po-Chun Liu ,  Kuan-Chieh Huang ,  Jyh-Ming Hung ,  Jen-Cheng Liu

IPC分类号： H01L29/10 ,  H01L29/167 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/1087 ,  H01L29/167 ,  H01L29/4933 ,  H01L29/6659

摘要： The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.