公开(公告)号：US20240347531A1

公开(公告)日：2024-10-17

申请号：US18756609

申请日：2024-06-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Po-Lin PENG ,  Han-Jen YANG ,  Jam-Wem LEE ,  Li-Wei CHU

IPC: H01L27/02 ,  H01L23/528 ,  H01L27/07 ,  H01L29/06 ,  H01L29/10 ,  H01L29/861

CPC classification number: H01L27/0277 ,  H01L23/5286 ,  H01L27/0722 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/861

Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.

公开(公告)号：US20240387512A1

公开(公告)日：2024-11-21

申请号：US18789918

申请日：2024-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Po-Lin PENG ,  Yu-Ti SU

IPC: H01L27/02 ,  H02H9/04

Abstract: An IC device includes a first power terminal, an IO pad, a first ESD protection device coupled between the first power terminal and IO pad, a first trigger current source device coupled between the first power terminal and the IO pad, and a substrate over which the first ESD protection device and first trigger current source device are formed. The first ESD protection device includes a parasitic BJT having a collector and an emitter coupled between the IO pad and first power terminal, and a base coupled via a substrate resistance to a well tap coupled to the first power terminal. The first trigger current source device, in response to an ESD voltage on the IO pad, becomes conductive and causes discharge of the ESD voltage through the first ESD protection device to the first power terminal.

公开(公告)号：US20220310589A1

公开(公告)日：2022-09-29

申请号：US17214110

申请日：2021-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Po-Lin PENG ,  Yu-Ti SU

IPC: H01L27/02 ,  H02H9/04

Abstract: An IC device includes a first power terminal, an IO pad, a first ESD protection device coupled between the first power terminal and IO pad, a first trigger current source device coupled between the first power terminal and IO pad, and a semiconductor substrate over which the first ESD protection device and first trigger current source device are formed. The first ESD protection device includes a parasitic BJT having a collector and an emitter coupled between the IO pad and first power terminal, and a base coupled via a substrate resistance to a well tap coupled to the first power terminal. The first trigger current source device, in response to an ESD voltage on the IO pad, becomes conductive and causes discharge of the ESD voltage through the first ESD protection device to the first power terminal.