公开(公告)号：US20230029739A1

公开(公告)日：2023-02-02

申请号：US17389142

申请日：2021-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Chung Chang ,  Sung-En Lin ,  Chung-Ting Ko ,  You-Ting Lin ,  Yi-Hsiu Liu ,  Po-Wei Liang ,  Jiun-Ming Kuo ,  Yung-Cheng Lu ,  Chi On Chui ,  Yuan-Ching Peng ,  Jen-Hong Chang

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234

摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.

公开(公告)号：US12113113B2

公开(公告)日：2024-10-08

申请号：US17389142

申请日：2021-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Chung Chang ,  Sung-En Lin ,  Chung-Ting Ko ,  You-Ting Lin ,  Yi-Hsiu Liu ,  Po-Wei Liang ,  Jiun-Ming Kuo ,  Yung-Cheng Lu ,  Chi On Chui ,  Yuan-Ching Peng ,  Jen-Hong Chang

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/78696

摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.