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公开(公告)号：US20230029739A1
公开(公告)日：2023-02-02
申请号：US17389142
申请日：2021-07-29
发明人： Chih-Chung Chang , Sung-En Lin , Chung-Ting Ko , You-Ting Lin , Yi-Hsiu Liu , Po-Wei Liang , Jiun-Ming Kuo , Yung-Cheng Lu , Chi On Chui , Yuan-Ching Peng , Jen-Hong Chang
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06 , H01L27/088 , H01L21/8234
摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.
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公开(公告)号：US11830948B2
公开(公告)日：2023-11-28
申请号：US17019366
申请日：2020-09-14
发明人： Jiun-Ming Kuo , Hsin-Chih Chen , Che-Yuan Hsu , Kuo-Chin Liu , Han-Yu Tsai , You-Ting Lin , Jen-Hong Chang
IPC分类号： H01L29/78 , H01L21/3065 , H01L29/66
CPC分类号： H01L29/7853 , H01L21/3065 , H01L29/66795
摘要： A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.
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公开(公告)号：US11532733B1
公开(公告)日：2022-12-20
申请号：US17359105
申请日：2021-06-25
发明人： Jen-Hong Chang , Yi-Hsiu Liu , You-Ting Lin , Chih-Chung Chang , Kuo-Yi Chao , Jiun-Ming Kuo , Yuan-Ching Peng , Sung-En Lin , Chia-Cheng Chao , Chung-Ting Ko
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US20240055527A1
公开(公告)日：2024-02-15
申请号：US18494759
申请日：2023-10-25
发明人： Jiun-Ming Kuo , Hsin-Chih Chen , Che-Yuan Hsu , Kuo-Chin Liu , Han-Yu Tsai , You-Ting Lin , Jen-Hong Chang
IPC分类号： H01L29/78 , H01L21/3065 , H01L29/66
CPC分类号： H01L29/7853 , H01L21/3065 , H01L29/66795
摘要： A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.
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公开(公告)号：US20220416058A1
公开(公告)日：2022-12-29
申请号：US17359105
申请日：2021-06-25
发明人： Jen-Hong Chang , Yi-Hsiu Liu , You-Ting Lin , Chih-Chung Chang , Kuo-Yi Chao , Jiun-Ming Kuo , Yuan-Ching Peng , Sung-En Lin , Chia-Cheng Chao , Chung-Ting Ko
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/78 , H01L29/06
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US12113113B2
公开(公告)日：2024-10-08
申请号：US17389142
申请日：2021-07-29
发明人： Chih-Chung Chang , Sung-En Lin , Chung-Ting Ko , You-Ting Lin , Yi-Hsiu Liu , Po-Wei Liang , Jiun-Ming Kuo , Yung-Cheng Lu , Chi On Chui , Yuan-Ching Peng , Jen-Hong Chang
IPC分类号： H01L29/423 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/786
CPC分类号： H01L29/42392 , H01L21/823481 , H01L27/088 , H01L29/0665 , H01L29/78696
摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.
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公开(公告)号：US20230098409A1
公开(公告)日：2023-03-30
申请号：US18077714
申请日：2022-12-08
发明人： Jen-Hong Chang , Yuan-Ching Peng , Chung-Ting Ko , Kuo-Yi Chao , Chia-Cheng Chao , You-Ting Lin , Chih-Chung Chang , Yi-Hsiu Liu , Jiun-Ming Kuo , Sung-En Lin
IPC分类号： H01L29/66 , H01L29/78 , H01L21/8234 , H01L29/06
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US20240194767A1
公开(公告)日：2024-06-13
申请号：US18426010
申请日：2024-01-29
发明人： Jen-Hong Chang , Yuan-Ching Peng , Chung-Ting Ko , Kuo-Yi Chao , Chia-Cheng Chao , You-Ting Lin , Chih-Chung Chang , Yi-Hsiu Liu , Jiun-Ming Kuo , Sung-En Lin
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US11888049B2
公开(公告)日：2024-01-30
申请号：US18077714
申请日：2022-12-08
发明人： Jen-Hong Chang , Yuan-Ching Peng , Chung-Ting Ko , Kuo-Yi Chao , Chia-Cheng Chao , You-Ting Lin , Chih-Chung Chang , Yi-Hsiu Liu , Jiun-Ming Kuo , Sung-En Lin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US20230062305A1
公开(公告)日：2023-03-02
申请号：US17460488
申请日：2021-08-30
发明人： Jen-Hong Chang , Yuan-Ching Peng , Jiun-Ming Kuo , Kuo-Yi Chao , Chih-Chung Chang , You-Ting LIN , Yen-Po Lin , Chen-Hsuan Liao
IPC分类号： H01L21/033 , H01L29/66 , H01L21/8234 , H01L29/423
摘要： A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.
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