公开(公告)号：US20230066097A1

公开(公告)日：2023-03-02

申请号：US17461247

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Han-Yu Tsai ,  Zu-Yin Liu ,  You-Ting Lin ,  Jiun-Ming Kuo ,  Kuo-Chin Liu

IPC分类号： H01L21/8234 ,  H01L29/06 ,  H01L29/66

摘要： A method of the present disclosure includes forming a fin-shaped structure including a plurality of semiconductor layers, a first hard mask layer, a second hard mask layer, and a third hard mask layer, forming a patterned masking layer having a mask portion and a window portion, wherein the third hard mask layer is exposed through the window portion, performing a first etch process to expose the second hard mask layer through the window portion, performing a second etch process to etch the exposed second hard mask layer and to leave behind second hard mask layer residues, performing a third etch process to remove the second hard mask layer residues, etching the plurality of semiconductor layers in the fin-shaped structure through the window portion to divide the fin-shaped structure into a first segment and a second segment, and forming an isolation feature around the first segment and the second segment.

公开(公告)号：US20230029739A1

公开(公告)日：2023-02-02

申请号：US17389142

申请日：2021-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Chung Chang ,  Sung-En Lin ,  Chung-Ting Ko ,  You-Ting Lin ,  Yi-Hsiu Liu ,  Po-Wei Liang ,  Jiun-Ming Kuo ,  Yung-Cheng Lu ,  Chi On Chui ,  Yuan-Ching Peng ,  Jen-Hong Chang

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234

摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.

公开(公告)号：US11830948B2

公开(公告)日：2023-11-28

申请号：US17019366

申请日：2020-09-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Ming Kuo ,  Hsin-Chih Chen ,  Che-Yuan Hsu ,  Kuo-Chin Liu ,  Han-Yu Tsai ,  You-Ting Lin ,  Jen-Hong Chang

IPC分类号： H01L29/78 ,  H01L21/3065 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/3065 ,  H01L29/66795

摘要： A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.

公开(公告)号：US11532733B1

公开(公告)日：2022-12-20

申请号：US17359105

申请日：2021-06-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Hong Chang ,  Yi-Hsiu Liu ,  You-Ting Lin ,  Chih-Chung Chang ,  Kuo-Yi Chao ,  Jiun-Ming Kuo ,  Yuan-Ching Peng ,  Sung-En Lin ,  Chia-Cheng Chao ,  Chung-Ting Ko

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

公开(公告)号：US20240120376A1

公开(公告)日：2024-04-11

申请号：US18159989

申请日：2023-01-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po Shao Lin ,  Jiun-Ming Kuo ,  Yuan-Ching Peng ,  You-Ting Lin ,  Yu Mei Jian

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L21/823412 ,  H01L21/823431 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78696

摘要： Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. The first width is greater than the second width.

公开(公告)号：US20240055527A1

公开(公告)日：2024-02-15

申请号：US18494759

申请日：2023-10-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Ming Kuo ,  Hsin-Chih Chen ,  Che-Yuan Hsu ,  Kuo-Chin Liu ,  Han-Yu Tsai ,  You-Ting Lin ,  Jen-Hong Chang

IPC分类号： H01L29/78 ,  H01L21/3065 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/3065 ,  H01L29/66795

摘要： A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.

公开(公告)号：US20220416058A1

公开(公告)日：2022-12-29

申请号：US17359105

申请日：2021-06-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Hong Chang ,  Yi-Hsiu Liu ,  You-Ting Lin ,  Chih-Chung Chang ,  Kuo-Yi Chao ,  Jiun-Ming Kuo ,  Yuan-Ching Peng ,  Sung-En Lin ,  Chia-Cheng Chao ,  Chung-Ting Ko

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/06

摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

公开(公告)号：US12113113B2

公开(公告)日：2024-10-08

申请号：US17389142

申请日：2021-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Chung Chang ,  Sung-En Lin ,  Chung-Ting Ko ,  You-Ting Lin ,  Yi-Hsiu Liu ,  Po-Wei Liang ,  Jiun-Ming Kuo ,  Yung-Cheng Lu ,  Chi On Chui ,  Yuan-Ching Peng ,  Jen-Hong Chang

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/78696

摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.

公开(公告)号：US12080603B2

公开(公告)日：2024-09-03

申请号：US17461247

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Han-Yu Tsai ,  Zu-Yin Liu ,  You-Ting Lin ,  Jiun-Ming Kuo ,  Kuo-Chin Liu

IPC分类号： H01L21/8234 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L21/823431 ,  H01L29/0649 ,  H01L29/66795

摘要： A method of the present disclosure includes forming a fin-shaped structure including a plurality of semiconductor layers, a first hard mask layer, a second hard mask layer, and a third hard mask layer, forming a patterned masking layer having a mask portion and a window portion, wherein the third hard mask layer is exposed through the window portion, performing a first etch process to expose the second hard mask layer through the window portion, performing a second etch process to etch the exposed second hard mask layer and to leave behind second hard mask layer residues, performing a third etch process to remove the second hard mask layer residues, etching the plurality of semiconductor layers in the fin-shaped structure through the window portion to divide the fin-shaped structure into a first segment and a second segment, and forming an isolation feature around the first segment and the second segment.

公开(公告)号：US20230098409A1

公开(公告)日：2023-03-30

申请号：US18077714

申请日：2022-12-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Hong Chang ,  Yuan-Ching Peng ,  Chung-Ting Ko ,  Kuo-Yi Chao ,  Chia-Cheng Chao ,  You-Ting Lin ,  Chih-Chung Chang ,  Yi-Hsiu Liu ,  Jiun-Ming Kuo ,  Sung-En Lin

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.