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公开(公告)号：US20230343885A1
公开(公告)日：2023-10-26
申请号：US17835049
申请日：2022-06-08
发明人： Hsiang-Lin Chen , Sin-Yi Jiang , Sung-Wen Huang Chen , Yin-Kai Liao , Jung-I Lin , Yi-Shin Chu , Kuan-Chieh Huang
IPC分类号： H01L31/103 , H01L31/0288 , H01L31/18
CPC分类号： H01L31/103 , H01L31/0288 , H01L31/1804
摘要： Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.
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公开(公告)号：US20240363672A1
公开(公告)日：2024-10-31
申请号：US18363950
申请日：2023-08-02
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14825 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14687 , H01L27/14806
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.
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