公开(公告)号：US20240360585A1

公开(公告)日：2024-10-31

申请号：US18771571

申请日：2024-07-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo-Lung HOU ,  Ming-Hsien LIN ,  Tsung-Cheng WU

IPC: C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/00 ,  C25D21/00

CPC classification number: C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/001 ,  C25D21/00

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

公开(公告)号：US20240376600A1

公开(公告)日：2024-11-14

申请号：US18782651

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Cheng WU ,  Sheng-Ying WU ,  Ming-Hsien LIN

IPC: C23C16/455 ,  C23C16/458 ,  H01J37/32

Abstract: An assembly includes a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness, and a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness. The first roughness is different from the second roughness.

公开(公告)号：US20240242942A1

公开(公告)日：2024-07-18

申请号：US18420184

申请日：2024-01-23

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Cheng WU ,  Ming-Hsien LIN ,  Chun-Fu CHEN ,  Sheng-Ying WU

IPC: H01J37/32 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01J37/32651 ,  H01L21/32051 ,  H01L21/32131 ,  H01L21/67259

Abstract: To reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.

公开(公告)号：US20220356597A1

公开(公告)日：2022-11-10

申请号：US17873136

申请日：2022-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Long HOU ,  Ming-Hsien LIN ,  Tsung-Cheng WU

IPC: C25D21/12 ,  C25D7/12 ,  C25D21/00 ,  C25D5/54 ,  C25D17/00

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.