公开(公告)号：US20230395655A1

公开(公告)日：2023-12-07

申请号：US17832681

申请日：2022-06-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shih-Cheng Chen ,  Zhi-Chang Lin ,  Jung-Hung Chang ,  Chien-Ning Yao ,  Tsung-Han Chuang ,  Kuo-Cheng Chiang ,  Chih-Hao Wang

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC分类号： H01L29/0649 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/31111 ,  H01L29/66553 ,  H01L29/66742

摘要： Provided are a semiconductor device and a method of forming the same. The semiconductor device includes at least two active strip regions, a hybrid fin structure, and a gate stack. The hybrid fin structure is disposed between the at least two active strip regions. The gate stack is across the at least two active strip regions and the hybrid fin structure. A portion of the hybrid fin structure exposed by the gate stack is free of a high dielectric constant material.