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    Image sensor with reduced optical path
    1.
    发明授权
    Image sensor with reduced optical path 有权

    公开(公告)号：US10269858B2

    公开(公告)日：2019-04-23

    申请号：US15915368

    申请日：2018-03-08

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Shyh-Fann Ting ,  Ching-Chun Wang ,  Chen-Jong Wang ,  Jhy-Jyi Sze ,  Chun-Ming Su ,  Wei Chuang Wu ,  Yu-Jen Wang

    IPC: H01L27/146

    Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.

    IMAGE SENSOR WITH REDUCED OPTICAL PATH
    2.
    发明申请
    IMAGE SENSOR WITH REDUCED OPTICAL PATH 有权
    具有减少光学路径的图像传感器

    公开(公告)号：US20160358970A1

    公开(公告)日：2016-12-08

    申请号：US15244355

    申请日：2016-08-23

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Shyh-Fann Ting ,  Ching-Chun Wang ,  Chen-Jong Wang ,  Jhy-Jyi Sze ,  Chun-Ming Su ,  Wei Chuang Wu ,  Yu-Jen Wang

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685

    Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.

    Abstract translation: 除此之外，还提供了一种或多种用于形成图像传感器的图像传感器和技术。 图像传感器包括被配置为检测光的光电二极管阵列。 图像传感器包括氧化物栅格，其包括第一氧化物栅格部分和第二氧化物栅格部分。 在第一氧化物栅格部分和第二氧化物栅格部分之间形成金属栅格。 氧化物网格和金属网格定义了填充网格。 填充格栅包括填充栅格部分，例如滤色器，其允许光通过填充栅格部分传播到下面的光电二极管。 氧化物栅格和金属栅格限制或引导光在填充栅格部分内。 氧化物栅格和金属栅格形成为使得填充栅格为光提供相对较短的传播路径，这改善了图像传感器的光检测性能。

    IMAGE SENSOR WITH REDUCED OPTICAL PATH
    3.
    发明申请
    IMAGE SENSOR WITH REDUCED OPTICAL PATH 有权
    具有减少光学路径的图像传感器

    公开(公告)号：US20150155322A1

    公开(公告)日：2015-06-04

    申请号：US14100598

    申请日：2013-12-09

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Shyh-Fann Ting ,  Ching-Chun Wang ,  Wei Chuang Wu ,  Yu-Jen Wang ,  Chun-Ming Su ,  Jhy-Jyi Sze ,  Chen-Jong Wang

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685

    Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.

    Abstract translation: 除此之外，还提供了一种或多种用于形成图像传感器的图像传感器和技术。 图像传感器包括被配置为检测光的光电二极管阵列。 图像传感器包括氧化物栅格，其包括第一氧化物栅格部分和第二氧化物栅格部分。 在第一氧化物栅格部分和第二氧化物栅格部分之间形成金属栅格。 氧化物网格和金属网格定义了填充网格。 填充格栅包括填充栅格部分，例如滤色器，其允许光通过填充物壁部分传播到下面的光电二极管。 氧化物网格和金属栅格限制或引导填料壁部分内的光。 氧化物栅格和金属栅格形成为使得填充栅格为光提供相对较短的传播路径，这改善了图像传感器的光检测性能。

    Semiconductor arrangement and formation thereof
    5.
    发明授权
    Semiconductor arrangement and formation thereof 有权

    公开(公告)号：US10103287B2

    公开(公告)日：2018-10-16

    申请号：US14149016

    申请日：2014-01-07

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Kai-Chun Hsu ,  Shyh-Fann Ting ,  Jhy-Jyi Sze ,  Chun-Tsung Kuo ,  Ching-Chun Wang ,  Dun-Nian Yaung

    IPC: H01L27/146 ,  H01L31/18

    Abstract: A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes an active area on a substrate, where the active area is at least one of a p-type region or an n-type region. The substrate includes a well, where the well is a p-well when the active area is a p-type region, and the well is an n-well when the active area is an n-type region. The well includes a photodiode. The active area is connected to a voltage supply having a voltage level, such as ground. The active area on the substrate increases a distance between the photodiode and the active area, which reduces junction leakage as compared to a semiconductor arrangement where the active area is formed at least partially within the substrate.

    Image sensor with reduced optical path
    6.
    发明授权
    Image sensor with reduced optical path 有权
    具有减小光路的图像传感器

    公开(公告)号：US09425228B2

    公开(公告)日：2016-08-23

    申请号：US14100598

    申请日：2013-12-09

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Shyh-Fann Ting ,  Ching-Chun Wang ,  Wei Chuang Wu ,  Yu-Jen Wang ,  Chun-Ming Su ,  Jhy-Jyi Sze ,  Chen-Jong Wang

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685

    Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.

    Abstract translation: 除此之外，还提供了一种或多种用于形成图像传感器的图像传感器和技术。 图像传感器包括被配置为检测光的光电二极管阵列。 图像传感器包括氧化物栅格，其包括第一氧化物栅格部分和第二氧化物栅格部分。 在第一氧化物栅格部分和第二氧化物栅格部分之间形成金属栅格。 氧化物网格和金属网格定义了填充网格。 填充格栅包括填充栅格部分，例如滤色器，其允许光通过填充物壁部分传播到下面的光电二极管。 氧化物网格和金属栅格限制或引导填料壁部分内的光。 氧化物栅格和金属栅格形成为使得填充栅格为光提供相对较短的传播路径，这改善了图像传感器的光检测性能。

    SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
    7.
    发明申请
    SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF 审中-公开
    半导体布置及其形成

    公开(公告)号：US20150155326A1

    公开(公告)日：2015-06-04

    申请号：US14149016

    申请日：2014-01-07

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Kai-Chun Hsu ,  Shyh-Fann Ting ,  Jhy-Jyi Sze ,  Chun-Tsung Kuo ,  Ching-Chun Wang ,  Dun-Nian Yaung

    IPC: H01L27/146 ,  H01L31/18

    CPC classification number: H01L31/18 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14689

    Abstract: A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes an active area on a substrate, where the active area is at least one of a p-type region or an n-type region. The substrate includes a well, where the well is a p-well when the active area is a p-type region, and the well is an n-well when the active area is an n-type region. The well includes a photodiode. The active area is connected to a voltage supply having a voltage level, such as ground. The active area on the substrate increases a distance between the photodiode and the active area, which reduces junction leakage as compared to a semiconductor arrangement where the active area is formed at least partially within the substrate.

    Abstract translation: 本文提供半导体布置和形成方法。 半导体装置包括衬底上的有源区域，其中有源区域是p型区域或n型区域中的至少一个。 衬底包括阱，其中当有源区是p型区时阱是p阱，并且当有源区是n型区时阱是n阱。 该井包括一个光电二极管。 有源区域连接到具有诸如地的电压电平的电压源。 衬底上的有源区域增加了光电二极管和有源区域之间的距离，与至少部分地在衬底内形成有源区域的半导体布置相比，这减少了结漏电。

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