公开(公告)号：US20240096834A1

公开(公告)日：2024-03-21

申请号：US18126767

申请日：2023-03-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Shih Hsuan HSU ,  Chan-Chung CHENG ,  Chun-Chen LIU ,  Cheng-Hung CHEN ,  Peng-Ren CHEN ,  Wen-Hao CHENG ,  Jong-l MOU

IPC分类号： H01L23/00

CPC分类号： H01L24/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1146 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/81

摘要： A method is provided. The method includes determining a first bump map indicative of a first set of positions of bumps. The method includes determining, based upon the first bump map, a first plurality of bump densities associated with a plurality of regions of the first bump map. The method includes smoothing the first plurality of bump densities to determine a second plurality of bump densities associated with the plurality of regions of the first bump map. The method includes determining, based upon the second plurality of bump densities, a second bump map indicative of the first set of positions of the bumps and a set of sizes of the bumps.