METHOD FOR GENERATING PARAMETER PATTERN, ION IMPLANTATION METHOD AND FEED FORWARD SEMICONDUCTOR MANUFACTURING METHOD
    1.
    发明申请
    METHOD FOR GENERATING PARAMETER PATTERN, ION IMPLANTATION METHOD AND FEED FORWARD SEMICONDUCTOR MANUFACTURING METHOD 有权
    用于生成参数图,离子植入方法和进给半导体制造方法

    公开(公告)号:US20160254122A1

    公开(公告)日:2016-09-01

    申请号:US14632719

    申请日:2015-02-26

    IPC分类号: H01J37/317

    摘要: The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

    摘要翻译: 本公开提供了一种用于生成参数图案的方法,包括:在工件的表面上的多个区域上执行多个测量以获得多个测量结果; 以及通过计算机根据所述多个测量结果导出参数模式; 其中所述参数图案包括对应于所述工件表面上的所述多个区域中的每一个的多个区域参数值。 本公开内容提供了一种前馈半导体制造方法,包括:在工件的表面上形成具有期望图案的层; 根据针对分布在所述工件的所述表面的多个区域上的期望图案的所述层,根据针对所述层的空间尺寸测量结果导出包括参数图案的控制信号; 并根据控制信号在工件的表面上进行离子注入。