公开(公告)号：US12266573B2

公开(公告)日：2025-04-01

申请号：US17483043

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

公开(公告)号：US20240379450A1

公开(公告)日：2024-11-14

申请号：US18780110

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

公开(公告)号：US20230008893A1

公开(公告)日：2023-01-12

申请号：US17483043

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/762

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.