公开(公告)号：US12266573B2

公开(公告)日：2025-04-01

申请号：US17483043

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

公开(公告)号：US20250072040A1

公开(公告)日：2025-02-27

申请号：US18941205

申请日：2024-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Lun-Kuang Tan ,  Chien Lin

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66

Abstract: In an embodiment, a method includes forming a plurality of semiconductor fins over a substrate, the plurality of semiconductor fins comprising a first fin, a second fin, a third fin, and a fourth fin; forming a first dielectric layer over the plurality of semiconductor fins, the first dielectric layer filling an entirety of a first trench between the first fin and the second fin; forming a second dielectric layer over the first dielectric layer, the second dielectric layer filling an entirety of a second trench between the second fin and the third fin, the forming the second dielectric layer comprising: forming an oxynitride layer; and forming an oxide layer; and forming a third dielectric layer over the second dielectric layer, the third dielectric layer filling an entirety of a third trench between the third fin and the fourth fin.

公开(公告)号：US12166127B1

公开(公告)日：2024-12-10

申请号：US18230419

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Lun-Kuang Tan ,  Chien Lin

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66

Abstract: In an embodiment, a method includes forming a plurality of semiconductor fins over a substrate, the plurality of semiconductor fins comprising a first fin, a second fin, a third fin, and a fourth fin; forming a first dielectric layer over the plurality of semiconductor fins, the first dielectric layer filling an entirety of a first trench between the first fin and the second fin; forming a second dielectric layer over the first dielectric layer, the second dielectric layer filling an entirety of a second trench between the second fin and the third fin, the forming the second dielectric layer comprising: forming an oxynitride layer; and forming an oxide layer; and forming a third dielectric layer over the second dielectric layer, the third dielectric layer filling an entirety of a third trench between the third fin and the fourth fin.

公开(公告)号：US20220336459A1

公开(公告)日：2022-10-20

申请号：US17232309

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Lun-Kuang Tan ,  Chien Lin

IPC: H01L27/092 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: In an embodiment, a method includes forming a plurality of semiconductor fins over a substrate, the plurality of semiconductor fins comprising a first fin, a second fin, a third fin, and a fourth fin; forming a first dielectric layer over the plurality of semiconductor fins, the first dielectric layer filling an entirety of a first trench between the first fin and the second fin; forming a second dielectric layer over the first dielectric layer, the second dielectric layer filling an entirety of a second trench between the second fin and the third fin, the forming the second dielectric layer comprising: forming an oxynitride layer; and forming an oxide layer; and forming a third dielectric layer over the second dielectric layer, the third dielectric layer filling an entirety of a third trench between the third fin and the fourth fin.

公开(公告)号：US20240379450A1

公开(公告)日：2024-11-14

申请号：US18780110

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

公开(公告)号：US11855092B2

公开(公告)日：2023-12-26

申请号：US17232309

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Lun-Kuang Tan ,  Chien Lin

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L27/0924 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/6681 ,  H01L29/7851

Abstract: In an embodiment, a method includes forming a plurality of semiconductor fins over a substrate, the plurality of semiconductor fins comprising a first fin, a second fin, a third fin, and a fourth fin; forming a first dielectric layer over the plurality of semiconductor fins, the first dielectric layer filling an entirety of a first trench between the first fin and the second fin; forming a second dielectric layer over the first dielectric layer, the second dielectric layer filling an entirety of a second trench between the second fin and the third fin, the forming the second dielectric layer comprising: forming an oxynitride layer; and forming an oxide layer; and forming a third dielectric layer over the second dielectric layer, the third dielectric layer filling an entirety of a third trench between the third fin and the fourth fin.

公开(公告)号：US20230008893A1

公开(公告)日：2023-01-12

申请号：US17483043

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing co., Ltd.

Inventor： Yi Chen Ho ,  Yiting Chang ,  Chi-Hsun Lin ,  Zheng-Yang Pan

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/762

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.