公开(公告)号：US07558027B2

公开(公告)日：2009-07-07

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

摘要翻译： 磁场传感器包括：磁场检测元件，其基于磁场检测元件的电阻来检测外部磁场的大小以感测电流，电阻根据外部磁场而变化; 形成为覆盖所述磁场检测元件的上屏蔽层; 以及相对于堆叠方向形成在上屏蔽层上方的保护层。 上屏蔽层包括其至少一部分覆盖磁场检测元件的顶表面的第一部分和覆盖第一部分的第二部分，并且第一部分具有比第二部分更大的磁致伸缩绝对值 。

公开(公告)号：US20070109691A1

公开(公告)日：2007-05-17

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US20090273864A1

公开(公告)日：2009-11-05

申请号：US12005274

申请日：2007-12-27

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  B44C1/22

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/3932 ,  H01L43/12

摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

摘要翻译： 磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。 当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。 形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。 偏置磁场施加层包括硬磁性层和高饱和磁化层。 高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

公开(公告)号：US07583478B2

公开(公告)日：2009-09-01

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US07843668B2

公开(公告)日：2010-11-30

申请号：US12005274

申请日：2007-12-27

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/3932 ,  H01L43/12

摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

摘要翻译： 磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。 当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。 形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。 偏置磁场施加层包括硬磁性层和高饱和磁化层。 高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

公开(公告)号：US20060262457A1

公开(公告)日：2006-11-23

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

公开(公告)号：US07948718B2

公开(公告)日：2011-05-24

申请号：US11078580

申请日：2005-03-14

申请人： Takahiko Machita ,  Koji Shimazawa

发明人： Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/399 ,  G11B2005/3996

摘要： An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed to the direction orthogonal to the air bearing surface. The MR element does not include any layer provided for fixing the direction of magnetization in the pinned layer. The pinned layer incorporates a ferromagnetic layer made of a ferromagnetic material having a positive magnetostriction constant. A bottom shield gap film and a top shield gap film disposed adjacent to the MR element each have a compressive stress of 600 MPa or greater.

摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的被钉扎层，其中被钉扎层中的磁化方向固定在与空气支承表面正交的方向上。 MR元件不包括用于固定钉扎层中的磁化方向的任何层。 钉扎层包含由具有正磁致伸缩常数的铁磁材料制成的铁磁层。 邻近MR元件设置的底部屏蔽间隙膜和顶部屏蔽间隙膜各自具有600MPa或更大的压缩应力。

公开(公告)号：US07881023B2

公开(公告)日：2011-02-01

申请号：US12019202

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流 在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层 在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作 第一屏蔽层的动作和 第二屏蔽层。

公开(公告)号：US07876535B2

公开(公告)日：2011-01-25

申请号：US12019205

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。 磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。 第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合， 应用层。 非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

公开(公告)号：US20100079917A1

公开(公告)日：2010-04-01

申请号：US12285069

申请日：2008-09-29

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

摘要翻译： 位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。 位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。 两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。 第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。