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公开(公告)号:US20100327282A1
公开(公告)日:2010-12-30
申请号:US12820252
申请日:2010-06-22
申请人: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
发明人: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
IPC分类号: H01L27/092
CPC分类号: H01L27/092 , H01L27/0688 , H01L27/283 , H01L27/286 , H01L27/3274 , H01L51/0508 , H01L51/057
摘要: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.
摘要翻译: 半导体器件包括:衬底; p型有机晶体管,其包括布置在所述衬底上或上方的有机半导体层; 以及n型无机晶体管,其包含布置在所述有机晶体管的上方或上方的无机半导体层,其中所述无机晶体管的沟道区至少部分地在所述有机晶体管的沟道区域的平面图中重叠。
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公开(公告)号:US08643114B2
公开(公告)日:2014-02-04
申请号:US12820252
申请日:2010-06-22
申请人: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
发明人: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
IPC分类号: H01L29/66
CPC分类号: H01L27/092 , H01L27/0688 , H01L27/283 , H01L27/286 , H01L27/3274 , H01L51/0508 , H01L51/057
摘要: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.
摘要翻译: 半导体器件包括:衬底; p型有机晶体管,其包括布置在所述衬底上或上方的有机半导体层; 以及n型无机晶体管,其包括布置在有机晶体管上或上方的无机半导体层,其中无机晶体管的沟道区至少部分地在平面图中与有机晶体管的沟道区重叠。
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