摘要:
A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.
摘要:
A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.
摘要:
An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.
摘要:
An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a first interlayer insulation film covering the transistor, a second interlayer insulation film disposed above the first interlayer insulation film, and a pixel electrode disposed above the second interlayer insulation film and electrically connected to the transistor. The electroluminescent device including an organic EL layer disposed between the pixel electrode and a counter electrode, and a capacitor including a first electrode formed by the same material as the silicon film and a second electrode formed by the same material as the gate electrode.
摘要:
An electroluminescent apparatus having a substrate and a transistor formed above the substrate and having a gate electrode and a semiconductor film. The electroluminescent apparatus having a first insulation film including a first contact hole and a junction electrode contacted to the semiconductor film through the first contact hole. The electroluminescent apparatus having a second insulation film formed above the junction electrode and the first insulation film and including a second contact hole and a pixel electrode formed on the second insulation film and contacted to the junction electrode through the second contact hole. The electroluminescent apparatus having an insulating layer formed above the second insulation film, an organic semiconductor film formed at an emitting region above the pixel electrode, and an opposite electrode formed above the organic semiconductor film and insulating layer. The insulating layer surrounding the emitting region and overlapping the second contact hole.
摘要:
A display device having a scanning line, a data line, a power supply line, and a pixel. The pixel having a first transistor supplied with a selecting pulse of a scanning signal, a holding capacitor having a first electrode and a second electrode that holds an image signal from the data line and the first thin film transistor. The pixel also having a second transistor controlled by the image signal, a gate of the second transistor being electrically connected to the second electrode, and a luminescent element provided between a pixel electrode and an opposite electrode opposed to the pixel electrode driven by current that flows between the pixel electrode and the opposite electrode. A potential of the gate electrode of the second transistor being able to be shifted by supplying to the first electrode of the holding capacitor with a predetermined signal after the selecting pulse becomes non-selective.
摘要:
A circuit board manufacturing method, including forming a transfer chip, the forming of the transfer chip including, forming a wiring above a first substrate, forming a plurality of first pad electrodes so as to be connected to the wiring and so as to be included in the transfer chip, and joining the transfer chip with a member such that the plurality of first pad electrodes contact the member.
摘要:
A display device having a substrate, a power supply line, and a pixel electrode. The display device also having a transistor having a gate electrode and electrically coupled between the power supply line and the pixel electrode, a opposite electrode, and an organic semiconductor film disposed between the pixel electrode and the opposite electrode. The display device further having a holding capacitor having a first electrode electrically coupled to the gate electrode of the transistor, a second electrode, and a first insulation film disposed between the first electrode and second electrode and a second insulation film. The holding capacitor of the display device being disposed between the substrate and the second insulation film and at a part of the second insulation film being disposed between the pixel electrode and the substrate.
摘要:
The invention enhances a production yield of a display device (an electro-optical device). The invention provides a method of manufacturing an electro-optical device including a display region in which a plurality of basic pixels are arranged, each basic pixel including a plurality of color pixels. The method includes: forming on a first substrate lines to drive a plurality of electro-optical elements respectively constituting the color pixels, correspondingly to the arrangement of the basic pixels; forming on a second substrate, as a chip to be transferred to each basic pixel, a drive circuit to drive the plurality of electro-optical elements which constitutes the plurality of color pixels of the basic pixels to obtain a plurality of basic-pixel driving chips; and transferring step of transferring the respective basic-pixel driving chips from the second substrate onto the first substrate, and connecting the drive circuits to regions of the lines corresponding to the basic pixels.
摘要:
A transistor circuit is provided including a driving transistor where conductance between the source and the drain is controlled in response to a supplied voltage, and a compensating transistor where the gate is connected to one of the source and the drain, the compensating transistor being connected so as to supply input signals to the gate of the driving transistor through the source and drain. In a transistor circuit where conductance control in a driving transistor is carried out in response to the voltage of input signals, it is possible to control the conductance by using input signals of a relatively low voltage and a variance in threshold characteristics of driving transistors is compensated. With this transistor circuit, a display panel that can display picture images with reduced uneven brightness is achieved.