摘要:
Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness.A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.
摘要:
Provided is an examination technique to detect defects with high sensitivity at an outer-most repeative portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness.A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repeative pattern, a defect judgement unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repeative pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.
摘要:
A circuit-pattern inspection apparatus and related method provide a highly sensitive defect inspection of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer. In certain examples, an image of a circuit pattern of a die formed on the semiconductor wafer is acquired to judge whether or not the circuit pattern contains a defect.
摘要:
Disclosed herein are a circuit-pattern inspection apparatus, and a circuit-pattern inspection method, which are capable of making a highly sensitive defect judgment of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer.In order to achieve the above object, the present invention includes the steps of: on the basis of the repeatability of a circuit pattern of a die formed on a semiconductor wafer, distributing data of an image to a plurality of image memories and storing the data therein; comparing the pieces of data of the image stored in the image memories with a combined reference image to generate a difference image, the combined reference image being combined by adding and averaging in a direction of the repeatability; judging that an area in which a difference value of the difference image is larger than a predetermined threshold value is a defect; and integrating and outputting a plurality of pieces of defect information, the defect information including image data judged to be defective and coordinates indicative of the defect.
摘要:
A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要:
A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要:
Provided are a method and a device for defect inspection, wherein, in a state where a few DOIs exist in a large number of nuisances, a classification performance can be improved by a few appropriate defect instructions and a high classification performance is ensured while mitigating the burden of user's defect instructions. The method and device for defect inspection is characterized by repeating extraction of one or more defects from a plurality of defects detected by imaging a sample, instruction of a classification class of the extracted defects, and calculation of a classification criterion and a classification performance from the image information and classification class of the defects, and determining, based on the finally obtained classification criterion, the classification class of the unknown defects. This makes it possible to improve a classification performance by a few appropriate defect instructions and ensure a high classification performance while mitigating the burden of user's defect instructions.
摘要:
The present invention relates to a defect inspection apparatus for inspecting defects in patterns formed on a semiconductor device, on the GUI of which for the confirmation of the inspection results an area is provided for displaying any one of or facing each other the features amount of defects, and the image during inspection or the reacquired image, and on the GUI of which a means is provided for setting the classification class and importance of the defects, and based on the classification class and the importance of the defects information set by this setting means, the classification conditions or the defect judging conditions are automatically or manually set so that the inspection conditions may be set easily.
摘要:
To make it possible to produce inspection conditions for optimizing various inspection conditions by extracting DOIs efficiently and instructing them reliably in a state where a few DOIs are hidden among a large number of nuisances. According to the present invention, a semiconductor wafer is inspected, images of defects detected by the inspection are shown on a screen, and an input interface is provided through which any given defect can be selected from among the defects whose images are shown. The inspection is conducted in such a way that the inspection conditions are adjusted to enhance capabilities for detecting the defect instructed by a user.
摘要:
The present invention relates to a defect inspection apparatus for inspecting defects in patterns formed on a semiconductor device, on the GUI of which for the confirmation of the inspection results an area is provided for displaying any one of or facing each other the features amount of defects, and the image during inspection or the reacquired image, and on the GUI of which a means is provided for setting the classification class and importance of the defects, and based on the classification class and the importance of the defects information set by this setting means, the classification conditions or the defect judging conditions are automatically or manually set so that the inspection conditions may be set easily.