公开(公告)号：US20110024865A1

公开(公告)日：2011-02-03

申请号：US12825946

申请日：2010-06-29

申请人： Takashi MATSUMOTO ,  Isao WATANABE ,  Tomoaki KOI

发明人： Takashi MATSUMOTO ,  Isao WATANABE ,  Tomoaki KOI

IPC分类号： H01L31/105

CPC分类号： H01L31/107 ,  H01L31/105

摘要： According to an exemplary aspect of the present invention, at least a semiconductor mesa and a semiconductor layer covering at least the side wall of the mesa and a semiconductor mesa are formed on an n-type semiconductor substrate. The semiconductor mesa includes at least a light absorption layer and a p-type contact layer. The principal surface of the semiconductor substrate tilts at an angle θ to the (100) plane. The angle θ is 0.1 degree≦|θ|≦10 degrees.

摘要翻译： 根据本发明的示例性方面，在n型半导体衬底上形成至少半导体台面和至少覆盖台面的侧壁和半导体台面的半导体层。 半导体台面至少包括光吸收层和p型接触层。 半导体衬底的主表面以角度倾斜; 到（100）飞机。 角度和角度 是0.1度＆nlE; |＆thetas; |＆nlE; 10度。