公开(公告)号：US5488030A

公开(公告)日：1996-01-30

申请号：US366408

申请日：1994-12-29

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01B12/00 ,  H01L29/06

CPC分类号： H01L39/225

摘要： There is disclosed a superconductor junction structure comprising: a first superconducting layer of an oxide superconductor formed in a desired pattern on a substrate; a non-superconducting layer of a non-superconductor formed on at least a part of the side faces of the first superconducting layer, a portion of the surface of the substrate near the part, and a top face of the first superconducting layer; and a second superconducting layer of the oxide superconductor formed on the non-superconducting layer, the non-superconducting layer being formed thin at the part, and forming a tunnel barrier. And further there is disclosed a process for fabricating a superconductor junction structure comprising: the first step of forming a first superconducting layer of an oxide superconductor in a desired pattern on a substrate; the second step of forming a non-superconducting layer of a non-superconductor formed on at least a part of the side faces of the first superconducting layer, a portion of the surface of the substrate near the part, and a top face of the first superconducting layer by depositing the non-superconductor from the above; and the third step of forming a second superconducting layer of the oxide superconductor on the non-superconducting layer.

摘要翻译： 公开了一种超导体结结构，包括：在衬底上以期望的图案形成的氧化物超导体的第一超导层; 形成在所述第一超导层的至少一部分侧面上的非超导体的非超导层，所述部分的所述基板表面的一部分以及所述第一超导层的顶面; 以及形成在所述非超导层上的所述氧化物超导体的第二超导层，所述非超导层在所述部分处形成为较薄，并且形成隧道势垒。 此外，还公开了一种用于制造超导体结结构的方法，包括：第一步骤，在衬底上形成期望图案的氧化物超导体的第一超导层; 形成在第一超导层的至少一部分侧面上的非超导体的非超导层，部分附近的基板表面的一部分和第一超导体的顶面的第二步骤 超导层通过从上面沉积非超导体; 以及在所述非超导层上形成所述氧化物超导体的第二超导层的第三步骤。

公开(公告)号：US5382566A

公开(公告)日：1995-01-17

申请号：US69912

申请日：1993-06-01

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01L39/24 ,  G11C11/44

CPC分类号： H01L39/2496 ,  Y10S505/817

摘要： A Josephson junction device comprising a single crystalline substrate including principal surface, a layer of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second superconducting portions respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion between the first and the second superconducting portions, which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from those of the first and second superconducting portions, and grain boundaries between the first superconducting portion and the junction portion and between the second superconducting portion and the junction portion, which constitute one weak link of the Josephson junction.

摘要翻译： 一种约瑟夫逊连接装置，包括：包括主表面的单晶衬底，与形成在衬底主表面上的衬底相同的材料的层，以便在主表面上形成台阶;以及氧化物超导体薄膜 基体的主表面。 氧化物超导体薄膜包括分别位于台阶上方和下方的第一和第二超导部分，其由氧化物超导体的单晶构成，第一和第二超导部分之间的接合部分由单个 晶体取向不同于第一和第二超导部分的氧化物超导体的晶体以及第一超导部分和接合部分之间以及第二超导部分和接合部分之间的晶界，构成一个弱连接点 约瑟夫逊交界处。

公开(公告)号：USRE37587E1

公开(公告)日：2002-03-19

申请号：US09035881

申请日：1998-03-06

申请人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

发明人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

IPC分类号： H01L310256

CPC分类号： H01L39/225

摘要： A SQUID includes a substrate and a superconducting current path of a patterned oxide superconductor material thin film formed on a surface of the substrate. A c-axis of an oxide crystal of the oxide superconductor material thin film is oriented in parallel to the surface of the substrate.

摘要翻译： SQUID包括形成在衬底的表面上的图案化氧化物超导体材料薄膜的衬底和超导电流路径。 氧化物超导体材料薄膜的氧化物晶体的c轴与基板的表面平行地取向。

公开(公告)号：US5624885A

公开(公告)日：1997-04-29

申请号：US526306

申请日：1995-09-11

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01L39/24

CPC分类号： H01L39/2496 ,  Y10S505/702

摘要： A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.

摘要翻译： 约瑟夫逊结装置包括基板，形成在基板的主表面的一部分上的氧化物薄膜，其由与晶片主表面成45°的角度偏移的单晶构成。 氧化物超导体薄膜的两部分之一形成在氧化物薄膜上，超导体薄膜的另一部分直接形成在基板的主表面上，使得氧化物超导体的两部分的晶格薄 膜分别与氧化物薄膜以及基板的主表面和晶界线性相关。 构成约瑟夫逊结的弱连接的晶界恰好在由氧化物薄膜形成的台阶上形成。

公开(公告)号：US5422337A

公开(公告)日：1995-06-06

申请号：US068189

申请日：1993-05-28

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L27/00 ,  H01L39/00

CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702

摘要： A Josephson junction device comprising a single crystalline substrate including a principal surface having two horizontal planes and a smooth slope between the two horizontal planes, and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second superconducting portions of a single crystalline oxide superconductor respectively positioned on the two horizontal planes of the substrate, a junction portion of a single crystalline oxide superconductor having a different crystal orientation from the two superconducting portions positioned on the slope of the substrate and two grain boundaries between each of the two superconducting portions and the junction portion. The grain boundaries constitutes one weak link of the Josephson junction.

摘要翻译： 一种约瑟夫逊结装置，其包括单晶衬底，该单晶衬底包括具有两个水平面的主表面和两个水平面之间的平滑斜率，以及形成在衬底的主表面上的氧化物超导体薄膜。 氧化物超导体薄膜包括分别位于衬底的两个水平面上的单晶氧化物超导体的第一和第二超导部分，具有与两个超导部分不同的晶体取向的单晶氧化物超导体的接合部分位于 在衬底的斜率上和两个超导部分和接合部分中的每一个之间的两个晶界。 晶界构成了约瑟夫逊结的一个弱环节。

公开(公告)号：US5612290A

公开(公告)日：1997-03-18

申请号：US461295

申请日：1995-06-05

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/24 ,  H01L39/22 ,  H01L27/00 ,  H01L39/00

CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702

摘要： A Josephson junction device is disclosed that includes a single crystalline substrate having a NaCl type crystal structure. The device includes a principal surface having two horizontal planes and a slope inclined at an angle of 5.degree. to 30.degree. between the two horizontal planes. An oxide superconductor thin film is formed on the principal surface of the substrate, which includes first and a second superconducting portions of a first single crystalline oxide superconductor and a second single crystalline oxide superconductor respectively positioned on the two horizontal planes of the substrate. A junction portion of a single crystalline oxide superconductor has a different crystal orientation from the first and the second superconducting portions, and is positioned on the slope of the substrate. Two grain boundaries between each of the first and the second superconducting portions and the junction portion constitute one weak link of the Josephson junction.

摘要翻译： 公开了包括具有NaCl型晶体结构的单晶衬底的约瑟夫逊结器件。 该装置包括在两个水平面之间具有两个水平面和倾斜5°至30°的斜面的主表面。 在衬底的主表面上形成氧化物超导体薄膜，其包括分别位于衬底的两个水平面上的第一单晶氧化物超导体和第二单晶氧化物超导体的第一和第二超导部分。 单晶氧化物超导体的接合部分具有与第一和第二超导部分不同的晶体取向，并且位于衬底的斜面上。 第一和第二超导部分和接合部分中的每个之间的两个晶界构成约瑟夫逊结的一个弱连接。

公开(公告)号：US5612545A

公开(公告)日：1997-03-18

申请号：US589242

申请日：1995-12-13

申请人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

发明人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01L31/0256 ,  H01L29/06

CPC分类号： H01L39/225

摘要： A SQUID includes a substrate and a superconducting current path of a patterned oxide superconductor material thin film formed on a surface of the substrate. A c-axis of an oxide crystal of the oxide superconductor material thin film is oriented in parallel to the surface of the substrate.

摘要翻译： SQUID包括形成在衬底的表面上的图案化氧化物超导体材料薄膜的衬底和超导电流路径。 氧化物超导体材料薄膜的氧化物晶体的c轴与基板的表面平行地取向。

公开(公告)号：US5565415A

公开(公告)日：1996-10-15

申请号：US487543

申请日：1995-06-07

申请人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

发明人： Takashi Matsuura ,  Saburo Tanaka ,  Hideo Itozaki

IPC分类号： H01L39/24

CPC分类号： H01L39/2496 ,  Y10S505/702

摘要： For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200.degree. C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.

摘要翻译： 为了制造具有由夹在一对氧化物超导薄膜之间的极薄的绝缘体层形成的隧道结的超导装置，在基板上形成氧化物超导体薄膜的第一超导层，并且在薄膜上淀积MgO薄膜 在不高于200℃的衬底温度下的第一超导层。对MgO薄膜进行热处理，使得沉积的MgO薄膜的结晶度提高，然后在第二超导层上形成氧化物超导体薄膜的第二超导层 MgO薄膜。

公开(公告)号：US5525582A

公开(公告)日：1996-06-11

申请号：US327793

申请日：1994-10-20

申请人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

发明人： Saburo Tanaka ,  Takashi Matsuura ,  Hideo Itozaki

IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L29/06 ,  H01B12/00

CPC分类号： H01L39/2496 ,  Y10S505/817

摘要： A Josephson junction device comprising a single crystalline substrate including a principal surface, a layer of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second superconducting portions respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion between the first and the second superconducting portions, which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from those of the first and second superconducting portions, and grain boundaries between the first superconducting portion and the junction portion and between the second superconducting portion and the junction portion, which constitute one weak link of the Josephson junction.

摘要翻译： 一种约瑟夫逊连接装置，其包括单晶衬底，其包括主表面，与形成在衬底的主表面上的衬底相同的材料的层，以在主表面上形成台阶;以及氧化物超导体薄膜，形成在 衬底的主表面。 氧化物超导体薄膜包括分别位于台阶上方和下方的第一和第二超导部分，其由氧化物超导体的单晶构成，第一和第二超导部分之间的接合部分由单个 晶体取向不同于第一和第二超导部分的氧化物超导体的晶体以及第一超导部分和接合部分之间以及第二超导部分和接合部分之间的晶界，构成一个弱连接点 约瑟夫逊交界处。

公开(公告)号：US5292718A

公开(公告)日：1994-03-08

申请号：US957639

申请日：1992-10-06

申请人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki ,  Takashi Matsuura

发明人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki ,  Takashi Matsuura

IPC分类号： H01L39/24 ,  B05D5/12

CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732

摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.

摘要翻译： 通过在衬底上依次沉积第一氧化物超导体薄层，非超导中间薄膜层和第二氧化物超导体薄膜层来制造超导结的工艺的改进。 在本发明中，非超导中间薄膜层由MgO构成，在O 2存在下将基板在600〜650℃预热至少5分钟，并在200度〜 在非超导中间薄膜层期间沉积400℃。