公开(公告)号：US07332437B2

公开(公告)日：2008-02-19

申请号：US10312750

申请日：2001-06-25

申请人： Takashi Nihonmatsu ,  Masahiko Yoshida ,  Yoshinori Sasaki ,  Masahito Saitoh ,  Toshiaki Takaku ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Masahiko Yoshida ,  Yoshinori Sasaki ,  Masahito Saitoh ,  Toshiaki Takaku ,  Tadahiro Kato

IPC分类号： H01L21/461

CPC分类号： H01L21/02008 ,  H01L21/30604

摘要： There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed. According to this, there can be provided a method for processing a semiconductor wafer to have good flatness, good surface roughness, and good condition on a back surface thereof.

摘要翻译： 提供一种处理经过倒角处理，研磨工艺，蚀刻工艺和镜面抛光工艺的半导体晶片的方法，其中在碱蚀刻之后进行酸蚀刻作为蚀刻工艺，并且进行酸蚀刻 使用由氢氟酸，硝酸，磷酸和水组成的酸蚀刻剂，经过倒角加工的半导体晶片的处理方法，表面研磨处理，蚀刻工艺和镜面抛光工艺，其中蚀刻 进行如上所述的处理，以及经受平坦化处理，蚀刻处理和镜面抛光处理的半导体晶片的处理方法，其中如上所述进行蚀刻处理，后表面抛光工艺在 作为镜面抛光处理的酸蚀刻，然后进行前表面研磨处理。 据此，可以提供一种在半导体晶片的背面具有良好的平坦度，良好的表面粗糙度和良好的状态的方法。