公开(公告)号：US07332437B2

公开(公告)日：2008-02-19

申请号：US10312750

申请日：2001-06-25

申请人： Takashi Nihonmatsu ,  Masahiko Yoshida ,  Yoshinori Sasaki ,  Masahito Saitoh ,  Toshiaki Takaku ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Masahiko Yoshida ,  Yoshinori Sasaki ,  Masahito Saitoh ,  Toshiaki Takaku ,  Tadahiro Kato

IPC分类号： H01L21/461

CPC分类号： H01L21/02008 ,  H01L21/30604

摘要： There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed. According to this, there can be provided a method for processing a semiconductor wafer to have good flatness, good surface roughness, and good condition on a back surface thereof.

摘要翻译： 提供一种处理经过倒角处理，研磨工艺，蚀刻工艺和镜面抛光工艺的半导体晶片的方法，其中在碱蚀刻之后进行酸蚀刻作为蚀刻工艺，并且进行酸蚀刻 使用由氢氟酸，硝酸，磷酸和水组成的酸蚀刻剂，经过倒角加工的半导体晶片的处理方法，表面研磨处理，蚀刻工艺和镜面抛光工艺，其中蚀刻 进行如上所述的处理，以及经受平坦化处理，蚀刻处理和镜面抛光处理的半导体晶片的处理方法，其中如上所述进行蚀刻处理，后表面抛光工艺在 作为镜面抛光处理的酸蚀刻，然后进行前表面研磨处理。 据此，可以提供一种在半导体晶片的背面具有良好的平坦度，良好的表面粗糙度和良好的状态的方法。

公开(公告)号：US06239039B1

公开(公告)日：2001-05-29

申请号：US09207193

申请日：1998-12-08

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

CPC分类号： H01L21/02052 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974 ,  Y10S438/977

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

摘要翻译： 处理从单晶锭切片的半导体晶片的方法至少包括倒角，研磨，蚀刻，镜面抛光和清洁的步骤。 在蚀刻步骤中，首先进行碱蚀刻，然后进行酸蚀刻，优选进行反应控制的酸蚀刻。 碱蚀刻的蚀刻量大于酸蚀刻的蚀刻量。 或者，在蚀刻步骤中，首先进行反应控制的酸蚀刻，然后进行扩散控制的酸蚀刻。 反应控制的酸蚀刻的蚀刻量大于扩散控制的酸蚀刻的蚀刻量。 该方法可以去除机械形成的损伤层，提高表面粗糙度，并有效降低局部形成的深坑的深度，同时通过研磨获得的晶片的平整度得以保持，以便产生具有光滑平坦的化学蚀刻晶片 蚀刻的表面几乎不引起发生颗粒和污染。

公开(公告)号：US06432837B1

公开(公告)日：2002-08-13

申请号：US09778679

申请日：2001-02-07

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

公开(公告)号：US06346485B1

公开(公告)日：2002-02-12

申请号：US09633401

申请日：2000-08-07

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21461

CPC分类号： H01L21/02052 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974 ,  Y10S438/977

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

摘要翻译： 处理从单晶锭切片的半导体晶片的方法至少包括倒角，研磨，蚀刻，镜面抛光和清洁的步骤。 在蚀刻步骤中，首先进行碱蚀刻，然后进行酸蚀刻，优选进行反应控制的酸蚀刻。 碱蚀刻的蚀刻量大于酸蚀刻的蚀刻量。 或者，在蚀刻步骤中，首先进行反应控制的酸蚀刻，然后进行扩散控制的酸蚀刻。 反应控制的酸蚀刻的蚀刻量大于扩散控制的酸蚀刻的蚀刻量。 该方法可以去除机械形成的损伤层，提高表面粗糙度，并有效降低局部形成的深坑的深度，同时通过研磨获得的晶片的平整度得以保持，以便产生具有光滑平坦的化学蚀刻晶片 蚀刻的表面几乎不引起发生颗粒和污染。

公开(公告)号：US06764392B2

公开(公告)日：2004-07-20

申请号：US09913790

申请日：2001-08-16

申请人： Takashi Nihonmatsu ,  Takahiro Kida ,  Tadao Tanaka

发明人： Takashi Nihonmatsu ,  Takahiro Kida ,  Tadao Tanaka

IPC分类号： B24B2900

CPC分类号： B24B37/30 ,  B25B11/005 ,  H01L21/30625 ,  H01L21/6838

摘要： A polishing method and polishing apparatus capable of improving the flatness of a wafer are provided. When a wafer is adhered to a wafer holding plate for polishing a surface to be polished of the wafer by pressing and rubbing the surface to be polished against a polishing pad on a polishing turn table, the wafer is held by vacuum-chucking the surface to be polished of the wafer such that a surface to be adhered of the wafer forms a convex surface in a vicinity including an arbitrary point in the surface to be adhered within a region surrounding a center of the surface to be adhered of the wafer, and the region being at least not less than 50% of an entire adhesion area; and the wafer is adhered to the wafer holding plate from a central portion of the surface to be adhered of the wafer.

摘要翻译： 提供能够提高晶片的平坦度的抛光方法和抛光装置。 当将晶片粘附到用于抛光晶片表面的晶片保持板时，通过将抛光表面按照抛光表面抛光在研磨台上的抛光垫上，将晶片通过真空吸附表面来保持 对晶片进行抛光，使得晶片表面在包围待粘附表面的任意点附近的附近形成凸起表面，该区域围绕晶片的待粘附表面的中心，并且 至少不小于整个粘合面积的50％的区域; 并且晶片从晶片的待粘合表面的中心部分粘附到晶片保持板。

公开(公告)号：US6080641A

公开(公告)日：2000-06-27

申请号：US858377

申请日：1997-05-19

申请人： Takashi Nihonmatsu ,  Makoto Osuga

发明人： Takashi Nihonmatsu ,  Makoto Osuga

IPC分类号： B24B9/06 ,  H01L21/02 ,  H01L21/304 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02008 ,  B24B9/065 ,  Y10S438/974

摘要： There is disclosed a method of manufacturing semiconductor wafers, in which a lapping process is performed prior to a chamfering process. This makes it possible to manufacture semiconductor wafers while maintaining the smoothness and dimensional accuracy of a chamfered surface of each wafer obtained by the chamfering process.

摘要翻译： 公开了一种制造半导体晶片的方法，其中在倒角加工之前进行研磨工艺。 这使得可以在保持通过倒角处理获得的每个晶片的倒角表面的平滑度和尺寸精度的同时制造半导体晶片。

公开(公告)号：US4168437A

公开(公告)日：1979-09-18

申请号：US832833

申请日：1977-09-13

申请人： Takashi Nihonmatsu

发明人： Takashi Nihonmatsu

IPC分类号： G01B11/00 ,  G01B11/06 ,  G01B11/245 ,  H01L21/66 ,  G01N21/30

CPC分类号： G01B11/245 ,  G01B11/00 ,  G01B11/0608

摘要： The method for efficiently measuring the thickness or surface flatness of, for example, a high-purity silicon semiconductor wafer uses a table to mount the wafer and a plurality of optoelectric sensors, each sensor being movable in the direction perpendicular to the table. The sensors are designed to project light beams to the measuring points set forth on the wafer surface. The light beam reflected from each measuring point is detected by a detector there. To the detector is connected a photoelectric transducer which generates electric signals corresponding to the distance of each measuring point from a reference surface, so that thickness variations can be found. In a preferred embodiment, the sensors are arranged in linear rows at regular intervals and the wafer surface is scanned with the light beams so that all measuring points distributed lattice-wise at regular intervals on the wafer surface are covered. The thickness variations of the wafer may be put in a computer which is connected to the measuring apparatus.

摘要翻译： 用于有效测量例如高纯度硅半导体晶片的厚度或表面平坦度的方法使用工作台来安装晶片和多个光电传感器，每个传感器可在垂直于工作台的方向上移动。 传感器被设计成将光束投射到晶片表面上所示的测量点。 从每个测量点反射的光束被检测器检测。 连接到检测器的光电转换器，其产生对应于每个测量点与参考表面的距离的电信号，从而可以发现厚度变化。 在优选实施例中，传感器以规则的间隔布置成线性行，并且用光束扫描晶片表面，使得覆盖在晶片表面上以规则间隔格子地分布的所有测量点。 可以将晶片的厚度变化放入连接到测量装置的计算机中。