公开(公告)号：US08575714B2

公开(公告)日：2013-11-05

申请号：US13085604

申请日：2011-04-13

申请人： Takashi Toyonaka ,  Hiroshi Hamada ,  Masataka Yokosawa

发明人： Takashi Toyonaka ,  Hiroshi Hamada ,  Masataka Yokosawa

IPC分类号： H01L31/00

CPC分类号： H01L31/022408 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/105 ,  Y02E10/544

摘要： Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.

摘要翻译： 提供了一种提高频率特性而不劣化组装操作性的背面照明半导体光接收装置。 光接收装置包括矩形基板; 形成在所述基板的前表面上的一侧的中心部分上的光接收台面部分，并且包括PN结部分; 形成在所述光接收台面部分上并且在所述PN结部分的一侧导电的P型电极; 形成在所述一侧的一个角部上的N型电极台面部; N型电极被拉出到N型电极台面部分并与PN结部分的另一侧导电; 形成在包括三个其他角部的区域中的P型电极台面部分和虚设电极台面部分; 以及形成在虚拟电极台面部上的虚拟电极。