公开(公告)号：US4123316A

公开(公告)日：1978-10-31

申请号：US729987

申请日：1976-10-06

Applicant: Takashi Tsuchimoto

Inventor： Takashi Tsuchimoto

IPC: B01J15/00 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32 ,  H05H1/30 ,  B01K1/00

CPC classification number: H01J37/32431 ,  B01J15/00 ,  C23C16/513 ,  C23C16/54 ,  H05H1/30

Abstract: A plasma processor comprising a plasma generating chamber which has a plasma outflow port, an evacuated plasma processing chamber which receives therein a member to be processed, such as a semiconductor substrate, and coaxial magnet means to form coaxial magnetic fields for transporting plasma from the plasma outflow port of the plasma generating chamber to the member to be processed, the distance between the plasma outflow port and the member to be processed being made shorter than the mean free path of gas remaining in the plasma processing chamber.

Abstract translation: 一种等离子体处理器，包括具有等离子体流出口的等离子体产生室，其中容纳诸如半导体衬底的待处理部件的真空等离子体处理室和同轴磁体装置，以形成用于从等离子体输送等离子体的同轴磁场 等离子体产生室的流出口到待处理的构件，等离子体流出口和待处理构件之间的距离比等离子体处理室中剩余的气体的平均自由程短。