公开(公告)号：US20240304437A1

公开(公告)日：2024-09-12

申请号：US18650014

申请日：2024-04-29

申请人： Applied Materials, Inc.

发明人： Chuanxi YANG ,  Hang YU ,  Sanjay KAMATH ,  Deenesh PADHI ,  Honggun KIM ,  Euhngi LEE ,  Zubin HUANG ,  Diwakar N. KEDLAYA ,  Rui CHENG ,  Karthik JANAKIRAMAN

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/513

CPC分类号： H01L21/0217 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/513 ,  H01L21/02274

摘要： Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

公开(公告)号：US11938745B2

公开(公告)日：2024-03-26

申请号：US17882786

申请日：2022-08-08

申请人： Comadur SA

发明人： Alexis Boulmay ,  Damien Le Boudouil

IPC分类号： B41M3/14 ,  C03C15/00 ,  C03C23/00 ,  C09D1/00 ,  C23C14/06 ,  C23C16/34 ,  C23C16/513 ,  G04D3/00

CPC分类号： B41M3/14 ,  C03C15/00 ,  C03C23/0055 ,  C09D1/00 ,  C23C14/0641 ,  C23C16/34 ,  C23C16/513 ,  G04D3/0069 ,  C03C23/006

摘要： A method including obtaining an at least partially transparent object (1), providing a mask (6) defining at least one opening (8) wherein the contour corresponds to a profile of the anti-counterfeit marking to be structured, the mask (6) covering a surface of the at least partially transparent object (1) at the areas not to be structured, structuring the anti-counterfeit marking by bombarding the at least partially transparent object (1) by an ion beam (14) through the at least one opening (8) of the mask (6), the mechanical properties of the mask (6) being sufficient to prevent the ions of the ion beam (14) from etching the surface of the at least partially transparent object (1) at the areas where this surface is covered by the mask (6), removing the mask (6), and placing the at least partially transparent object (1) in a bath (16) at alkaline pH.

公开(公告)号：US20240035163A1

公开(公告)日：2024-02-01

申请号：US18482472

申请日：2023-10-06

申请人： Carl Zeiss SMT GmbH

发明人： Felix LANGE ,  Alexandra PAZIDIS ,  Marcel HAERTLING ,  Alexander WIEGAND

IPC分类号： C23C16/48 ,  G02B5/08 ,  C23C16/513 ,  C23C16/52 ,  C23C16/40

CPC分类号： C23C16/482 ,  G02B5/0891 ,  C23C16/486 ,  C23C16/513 ,  C23C16/52 ,  C23C16/40

摘要： The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.

公开(公告)号：US20230265562A1

公开(公告)日：2023-08-24

申请号：US17677106

申请日：2022-02-22

申请人： Applied Materials, Inc.

发明人： Fei Wu ,  Tae Kyung Won ,  Yu-Min Wang ,  Young Dong Lee

IPC分类号： C23C16/513 ,  C23C16/30

CPC分类号： C23C16/513 ,  C23C16/308

摘要： Exemplary methods of forming a silicon-oxygen-and-nitrogen-containing barrier layer are described. The methods include flowing deposition gases into a substrate processing region of a processing chamber, where the deposition gases include a silicon-containing gas and a nitrogen-containing gas. A deposition plasma is generated from the deposition gases in the substrate processing region. A silicon-oxygen-and-nitrogen-containing layer is deposited on a substrate from the deposition plasma, where the silicon-oxygen-and-nitrogen-containing layer is characterized by thickness of less than or about 2000 Å. The methods further include exposing a surface of the silicon-oxygen-and-nitrogen-containing layer to a treatment plasma to form a treated silicon-oxygen-and-nitrogen-containing layer, where the treatment plasma is formed from a nitrogen-containing gas and is silicon free.

公开(公告)号：US11713248B2

公开(公告)日：2023-08-01

申请号：US17138194

申请日：2020-12-30

申请人： Samsung Electronics Co., Ltd.

发明人： Changseok Lee ,  Changhyun Kim ,  Kyung-Eun Byun ,  Keunwook Shin ,  Hyeonjin Shin ,  Eunkyu Lee

IPC分类号： C23C16/26 ,  C01B32/186 ,  C01B32/194 ,  C23C16/513 ,  C23C16/04 ,  C23C16/02

CPC分类号： C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

摘要： A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US20230167554A1

公开(公告)日：2023-06-01

申请号：US17990022

申请日：2022-11-18

申请人： TOKYO ELECTRON LIMITED

发明人： Tatsuo MATSUDO

IPC分类号： C23C16/517 ,  C23C16/455 ,  C23C16/458 ,  C23C16/513 ,  C23C16/505 ,  C23C16/52

CPC分类号： C23C16/517 ,  C23C16/52 ,  C23C16/505 ,  C23C16/513 ,  C23C16/4582 ,  C23C16/45565

摘要： A plasma processing apparatus comprising: a chamber; an upper electrode; a shower head having openings, an inner space of the chamber being divided into a first space and a second space; a shielding part including first and second shielding plates arranged in parallel between the upper electrode and the shower head, the shielding part having through-holes aligned with the openings; a gas supply device configured to supply a gas; a radio frequency (RF) power supply configured to output an RF voltage; a voltage applying part configured to select ions or radicals passing through the through-holes in the plasma by applying a control voltage to the shielding part; and a controller configured to control the voltage applying part by independently applying a control voltage to each of the first and second shield plates depending on control from the controller.

公开(公告)号：US20230167543A1

公开(公告)日：2023-06-01

申请号：US18101944

申请日：2023-01-26

申请人： Applied Materials, Inc.

发明人： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC分类号： C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

CPC分类号： C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  C23C16/513 ,  C23C16/4404 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195 ,  Y10S156/914 ,  Y10T428/1317 ,  Y10T428/12743 ,  Y10T428/1259 ,  Y10T428/12667 ,  Y10T428/12764 ,  Y10T428/12604 ,  Y10T428/31504 ,  Y10T428/12736 ,  Y10T428/1266 ,  Y10T428/12597 ,  Y10T428/12611 ,  Y10T428/31678 ,  C04B2235/96

摘要： One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20230160067A1

公开(公告)日：2023-05-25

申请号：US18099616

申请日：2023-01-20

申请人： Starfire Industires, LLC

发明人： Brian Edward Jurczyk ,  Robert Andrew Stubbers

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23C16/513 ,  C23C16/02 ,  H01J37/32 ,  C23C16/515 ,  C23C14/02

CPC分类号： C23C16/511 ,  C23C16/45576 ,  C23C16/513 ,  C23C16/4551 ,  C23C16/45595 ,  C23C16/0227 ,  H01J37/32192 ,  C23C16/515 ,  C23C14/021 ,  H01J37/32201 ,  H01J37/32247 ,  H01J37/32449 ,  C23C14/34

摘要： A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

公开(公告)号：US11643721B2

公开(公告)日：2023-05-09

申请号：US16129232

申请日：2018-09-12

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC分类号： C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC分类号： C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20190062921A1

公开(公告)日：2019-02-28

申请号：US15691072

申请日：2017-08-30

申请人： Ultra Conductive Copper Company, Inc.

发明人： Horst Jakob Adams

IPC分类号： C23C16/54 ,  H01B1/02 ,  H01B5/02 ,  H01B1/04 ,  H01B13/00 ,  H01B5/00 ,  C23C16/26 ,  F28F21/02

CPC分类号： C23C16/545 ,  B32B15/20 ,  B82Y30/00 ,  C01B32/186 ,  C01B2204/02 ,  C23C16/26 ,  C23C16/513 ,  F28F21/02 ,  F28F2013/001 ,  H01B1/02 ,  H01B1/04 ,  H01B5/002 ,  H01B5/02 ,  H01B13/0003 ,  H01B13/0036

摘要： A composite structure comprises a copper layer having a thickness of no larger than 25 μm, and first and second graphene layers sandwiching the copper layer.