公开(公告)号：US20090310399A1

公开(公告)日：2009-12-17

申请号：US12545363

申请日：2009-08-21

申请人： Takayuki Kawahara ,  Riichiro Takemura ,  Kenchi ITO ,  Hiromasa Takahashi

发明人： Takayuki Kawahara ,  Riichiro Takemura ,  Kenchi ITO ,  Hiromasa Takahashi

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C11/14

CPC分类号： H01L27/228 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.

摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。

公开(公告)号：US20070285975A1

公开(公告)日：2007-12-13

申请号：US11736252

申请日：2007-04-17

申请人： Takayuki KAWAHARA ,  Riichiro TAKEMURA ,  Kenchi ITO ,  Hiromasa TAKAHASHI

发明人： Takayuki KAWAHARA ,  Riichiro TAKEMURA ,  Kenchi ITO ,  Hiromasa TAKAHASHI

IPC分类号： G11C11/02

CPC分类号： H01L27/228 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.

摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。

公开(公告)号：US20090161414A1

公开(公告)日：2009-06-25

申请号：US12339167

申请日：2008-12-19

申请人： Kenchi ITO ,  Jun Hayakawa ,  Katsuya Miura

发明人： Kenchi ITO ,  Jun Hayakawa ,  Katsuya Miura

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1675 ,  G11C11/161 ,  Y10S977/935

摘要： An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value.

摘要翻译： 本发明的目的是使用自旋扭矩磁化反转校正磁性随机存取存储器中的单元之间的写入电流的波动。 本发明包括设置在位线和字线之间的磁阻效应元件，连接到位线的一端的第一可变电阻元件，与另一端连接的第二可变电阻元件 位线的第一电压施加单元，对第一可变电阻元件施加电压的第一施加电压单元和向第二可变电阻元件施加电压的第二电压施加单元，当执行写入操作时，将偏移磁场施加到 通过基于预定的电阻值在第一电压施加单元和第二电压施加单元之间流动可变电流来产生磁阻效应元件的自由层。