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1.发明申请公开(公告)号：US20080030908A1
公开(公告)日：2008-02-07
申请号：US11812311
申请日：2007-06-18
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译： 公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。 在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层 沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制 偏置层和MR多层结构，以及形成在金属层上的上电极层。
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2.发明申请公开(公告)号：US20110262632A1
公开(公告)日：2011-10-27
申请号：US13042264
申请日：2011-03-07
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译： 公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。 在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层 沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制 偏置层和MR多层结构，以及形成在金属层上的上电极层。
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3.发明授权公开(公告)号：US07643247B2
公开(公告)日：2010-01-05
申请号：US11634037
申请日：2006-12-05
申请人： Masashi Sano , Kento Edakawa , Nobuyoshi Morizumi , Norio Kiuchi
发明人： Masashi Sano , Kento Edakawa , Nobuyoshi Morizumi , Norio Kiuchi
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/6005 , G11B5/6064 , H01C7/006
摘要： A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.
摘要翻译： 提供了具有稳定的电阻的薄膜电阻器，即使在高温环境中也抑制了对α相的相变。 该薄膜电阻器具有如下层状结构：将由镍和铜构成的合金膜，含有镍和铬的合金膜或含有铜和锰的合金膜的双层膜形成的基底层层叠在 或由含镍和铬的单一合金膜形成; 以及由β相钽膜或主要含有β相钽的合金膜形成并沉积在基底层上的电阻层，所述电阻层具有晶体结构，其中β相的（002）面 晶体最强烈地取向于层表面。
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4.发明申请公开(公告)号：US20070127161A1
公开(公告)日：2007-06-07
申请号：US11634037
申请日：2006-12-05
申请人： Masashi Sano , Kento Edakawa , Nobuyoshi Morizumi , Norio Kiuchi
发明人： Masashi Sano , Kento Edakawa , Nobuyoshi Morizumi , Norio Kiuchi
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/6005 , G11B5/6064 , H01C7/006
摘要： A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.
摘要翻译： 提供了具有稳定的电阻的薄膜电阻器，即使在高温环境中也抑制了对α相的相变。 该薄膜电阻器具有如下层状结构：将由镍和铜构成的合金膜，含有镍和铬的合金膜或含有铜和锰的合金膜的双层膜形成的基底层层叠在 或由含镍和铬的单一合金膜形成; 以及由β相钽膜或主要含有β相钽的合金膜形成并沉积在基底层上的电阻层，所述电阻层具有晶体结构，其中β相的（002）面 晶体最强烈地取向于层表面。
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