SEMICONDUCTOR DEVICE FOR PREVENTING ERRONEOUS WRITE TO MEMORY CELL IN SWITCHING OPERATIONAL MODE BETWEEN NORMAL MODE AND STANDBY MODE
    1.
    发明申请
    SEMICONDUCTOR DEVICE FOR PREVENTING ERRONEOUS WRITE TO MEMORY CELL IN SWITCHING OPERATIONAL MODE BETWEEN NORMAL MODE AND STANDBY MODE 有权
    用于防止在正常模式和待机模式之间切换操作模式的存储器单元的错误写入的半导体器件

    公开(公告)号:US20110116321A1

    公开(公告)日:2011-05-19

    申请号:US13008448

    申请日:2011-01-18

    IPC分类号: G11C16/30 G11C5/14

    摘要: When an operational mode is shifted to a standby mode, a first transistor is brought into a conduction state by a control signal, and a word line is thereby clamped to a ground voltage. Further, a second transistor is brought into a non-conduction state, and supply of an internal power supply voltage to a word line driver is shut off. Subsequently, the supply of the internal power supply voltage is halted for saving electrical power. When the operational mode returns to a normal mode, the supply of the internal power supply voltage is started, and subsequently, the first transistor is brought into the non-conduction state by the control signal, and the second transistor is thereby brought into the conduction state.

    摘要翻译: 当操作模式转换到待机模式时,第一晶体管通过控制信号进入导通状态,并且字线由此被钳位到接地电压。 此外,第二晶体管进入非导通状态,并且切断向字线驱动器提供内部电源电压。 随后,停止内部电源电压的供应以节省电力。 当操作模式返回到正常模式时,内部电源电压的供应开始,随后通过控制信号使第一晶体管变为非导通状态,从而使第二晶体管进入导通状态 州。