公开(公告)号：US20070080404A1

公开(公告)日：2007-04-12

申请号：US11533370

申请日：2006-09-20

Applicant: Taketo FUKURO ,  Masao OKIHARA

Inventor： Taketo FUKURO ,  Masao OKIHARA

IPC: H01L23/62

CPC classification number: H01L27/1203 ,  H01L27/0251 ,  H01L29/41733 ,  H01L29/665

Abstract: A semiconductor device includes a substrate, a first oxide film lying on the substrate, a thin semiconductor film lying on the first oxide film, a first terminal formed on the semiconductor film, a second terminal formed on the semiconductor film, a semiconductor element formed on the semiconductor film and electrically connected between the first and second terminals, and a protective diode formed on the semiconductor film and electrically connected in between the second and first terminal in a forward direction.

Abstract translation: 半导体器件包括基板，位于基板上的第一氧化物膜，位于第一氧化膜上的薄半导体膜，形成在半导体膜上的第一端子，形成在半导体膜上的第二端子，形成在半导体膜上的半导体元件 半导体膜，电连接在第一和第二端子之间，形成在半导体膜上的保护二极管，并在第二端子和第一端子之间沿正向电连接。