公开(公告)号：US20070080404A1

公开(公告)日：2007-04-12

申请号：US11533370

申请日：2006-09-20

Applicant: Taketo FUKURO ,  Masao OKIHARA

Inventor： Taketo FUKURO ,  Masao OKIHARA

IPC: H01L23/62

CPC classification number: H01L27/1203 ,  H01L27/0251 ,  H01L29/41733 ,  H01L29/665

Abstract: A semiconductor device includes a substrate, a first oxide film lying on the substrate, a thin semiconductor film lying on the first oxide film, a first terminal formed on the semiconductor film, a second terminal formed on the semiconductor film, a semiconductor element formed on the semiconductor film and electrically connected between the first and second terminals, and a protective diode formed on the semiconductor film and electrically connected in between the second and first terminal in a forward direction.

Abstract translation: 半导体器件包括基板，位于基板上的第一氧化物膜，位于第一氧化膜上的薄半导体膜，形成在半导体膜上的第一端子，形成在半导体膜上的第二端子，形成在半导体膜上的半导体元件 半导体膜，电连接在第一和第二端子之间，形成在半导体膜上的保护二极管，并在第二端子和第一端子之间沿正向电连接。

公开(公告)号：US20090317950A1

公开(公告)日：2009-12-24

申请号：US12487952

申请日：2009-06-19

Applicant: Masao OKIHARA

Inventor： Masao OKIHARA

IPC: H01L21/336

CPC classification number: H01L29/42384 ,  H01L21/28052 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6653

Abstract: A semiconductor device manufacturing method which sequentially forms a gate oxide film and gate electrode material over a semiconductor layer of an SOI substrate and patterns the material into gate electrodes. The method further comprises the steps of forming sidewalls made of an insulator to cover side surfaces of the gate electrode; ion-implanting into the semiconductor layer on both sides of the gate electrode to form drain/source regions; partially etching the sidewalls to expose upper parts of the side surfaces of the gate electrode; depositing a metal film to cover the tops of the drain/source regions and of the gate electrode and the exposed upper parts of the side surfaces of the gate electrode; and performing heat treatment on the SOI substrate to form silicide layers respectively in the surfaces of the gate electrode and of the drain/source regions.

Abstract translation: 一种在SOI衬底的半导体层上依次形成栅极氧化膜和栅电极的半导体器件制造方法，并将该材料图案化成栅电极。 该方法还包括以下步骤：形成由绝缘体制成的侧壁以覆盖栅电极的侧表面; 离子注入到栅极两侧的半导体层中以形成漏极/源极区; 部分蚀刻侧壁以暴露栅电极的侧表面的上部; 沉积金属膜以覆盖漏极/源极区域以及栅电极的顶部和栅电极的侧表面的暴露的上部; 对SOI衬底进行热处理，分别在栅极电极和漏极/源极区域的表面形成硅化物层。